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APT30GP60BDQ1G

APT30GP60BDQ1G
Mfr. #:
APT30GP60BDQ1G
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APT30GP60BDQ1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GP60BDQ1G DatasheetAPT30GP60BDQ1G Datasheet (P4-P6)APT30GP60BDQ1G Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Confezione:
Tubo
Marca:
Microchip / Microsemi
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Tags
APT30GP60BDQ1, APT30GP60BDQ, APT30GP60BD, APT30GP60B, APT30GP, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 100A 463000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***rochip
IGBT PT MOS 7 Combi 600 V 30 A TO-247
***ure Electronics
IGBT PT 600 V 100 A 463 W Through Hole TO-247 [B]
***p One Stop
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3
***Parts
IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
*** Electronics
ON SEMICONDUCTOR NGTB50N60S1WG IGBT Single Transistor, 100 A, 1.8 V, 417 W, 600 V, TO-247, 3 Pins
***ical
Trans IGBT Chip N-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
ON SEMICONDUCTOR NGTB75N60SWG IGBT Single Transistor, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3;
***ical
Trans IGBT Chip N=-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
RES SMD 23.7K OHM 1% 1/8W 0805
***r Electronics
Insulated Gate Bipolar Transistor
***ical
Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
***ponent Stockers USA
100 A 600 V N-CHANNEL IGBT TO-247
***et
STMICROELECTRONICS STGW50H60DF IGBTS
Parte # Mfg. Descrizione Azione Prezzo
APT30GP60BDQ1G
DISTI # V99:2348_09096332		Microsemi CorporationTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
RoHS: Compliant		60
  • 100:$8.0100
  • 25:$9.5109
  • 10:$9.6080
  • 1:$9.6300
APT30GP60BDQ1G
DISTI # APT30GP60BDQ1G-ND		Microsemi CorporationIGBT 600V 100A 463W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		74In Stock
  • 510:$7.2378
  • 270:$7.9383
  • 120:$8.6387
  • 30:$9.5727
  • 10:$10.5070
  • 1:$11.6700
APT30GP60BDQ1G
DISTI # 28981976		Microsemi CorporationTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
RoHS: Compliant		1463
  • 8:$7.3000
APT30GP60BDQ1G
DISTI # 31011300		Microsemi CorporationTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
RoHS: Compliant		60
  • 25:$9.5109
  • 10:$9.6080
  • 2:$9.6300
APT30GP60BDQ1G
DISTI # 494-APT30GP60BDQ1G		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
RoHS: Compliant		0
  • 1:$10.9000
APT30GP60BDQ1G
DISTI # APT30GP60BDQ1G		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		1463
  • 1:$5.6600
  • 500:$5.5200
APT30GP60BDQ1G
DISTI # C1S505800105499		Microsemi CorporationTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
RoHS: Compliant		1463
  • 500:$7.6600
  • 200:$7.7400
  • 100:$7.8200
  • 50:$7.9200
  • 10:$8.0100
  • 5:$10.0000
Immagine Parte # Descrizione
NC3MAAH-1

Mfr.#: NC3MAAH-1

OMO.#: OMO-NC3MAAH-1-716

 XLR Connectors 3P MALE CHASS HORIZONTAL 1
NC3FAAH-0

Mfr.#: NC3FAAH-0

OMO.#: OMO-NC3FAAH-0-716

 XLR Connectors 3P FEMALE HORIZ NO LATCH OR GROUND
TMK316AB7106KLHT

Mfr.#: TMK316AB7106KLHT

OMO.#: OMO-TMK316AB7106KLHT-TAIYO-YUDEN

 Multilayer Ceramic Capacitors MLCC - SMD/SMT AEC-Q200 1206 X7R 25V 10uF 10%
Disponibilità
Azione:
67
Su ordine:
2050
Inserisci la quantità:
Il prezzo attuale di APT30GP60BDQ1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,90 USD
10,90 USD
10
9,81 USD
98,10 USD
25
8,93 USD
223,25 USD
100
8,06 USD
806,00 USD
250
7,41 USD
1 852,50 USD
500
6,75 USD
3 375,00 USD
1000
5,88 USD
5 880,00 USD
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