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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSZ130N03LSGATMA1 DISTI # V72:2272_06391017 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON EP T/R RoHS: Compliant | 878 |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 13464In Stock |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 13464In Stock |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
|
| BSZ130N03LSGATMA1 DISTI # 26195711 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON EP T/R RoHS: Compliant | 878 |
|
| BSZ130N03LSG DISTI # SP000278810 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 5000 |
|
| BSZ130N03LSGATMA1 DISTI # SP000278810 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 5000 |
|
| BSZ130N03LSG DISTI # BSZ130N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: BSZ130N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSZ130N03LSGATMA1 DISTI # BSZ130N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ130N03LSGATMA1 DISTI # 60R2543 | Infineon Technologies AG | MOSFET, N CH, 35A, 30V, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):10.8mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power , RoHS Compliant: Yes | 0 |
|
| BSZ130N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3430 |
|
| BSZ130N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6507 |
|
| BSZ130N03LS G DISTI # 726-BSZ130N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 RoHS: Compliant | 9698 |
|
| BSZ130N03LSGATMA1 DISTI # 9062909P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 35A OPTIMOS TSDSON8, RL | 240 |
|
| BSZ130N03LSG | Infineon Technologies AG | 2897 | ||
| BSZ130N03LSG DISTI # XSKDRABV0017845 | INF | RoHS: Compliant | 5000 |
|
| BSZ130N03LSGATMA1 DISTI # 1775506 | Infineon Technologies AG | MOSFET, N CH, 35A, 30V, PG-TSDSON-8 RoHS: Compliant | 4800 |
|
| BSZ130N03LSGATMA1 DISTI # C1S322000676051 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 978 |
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| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSZ130N03MS G OMO.#: OMO-BSZ130N03MS-G |
MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M |
|
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Mfr.#: BSZ130N03LS G OMO.#: OMO-BSZ130N03LS-G |
MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 |
|
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Mfr.#: BSZ130N03MSGATMA1 OMO.#: OMO-BSZ130N03MSGATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSZ130N03LS G OMO.#: OMO-BSZ130N03LS-G-1190 |
MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 |
|
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Mfr.#: BSZ130N03LSG OMO.#: OMO-BSZ130N03LSG-1190 |
Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) |
|
Mfr.#: BSZ130N03LSGATMA1 |
MOSFET N-CH 30V 35A TSDSON-8 |
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Mfr.#: BSZ130N03M OMO.#: OMO-BSZ130N03M-1190 |
Nuovo e originale |
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Mfr.#: BSZ130N03MS OMO.#: OMO-BSZ130N03MS-1190 |
Nuovo e originale |
|
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Mfr.#: BSZ130N03MSG OMO.#: OMO-BSZ130N03MSG-1190 |
Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSZ130N03MSGATMA1 |
MOSFET N-CH 30V 35A TSDSON-8 |