SI7308DN-T1-GE3

Mfr. #:: SI7308DN-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N-CH 60V 6A 1212-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7308DN-T1-GE3 Scheda dati
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Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7308DN-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 19.8W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Ingresso-Capacità-Ciss-Vds: 665pF @ 15V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 6A (Tc)

Rds-On-Max-Id-Vgs: 58 mOhm @ 5.4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 20nC @ 10V

Pd-Power-Dissipazione: 3.2 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 10 ns

Ora di alzarsi: 65 ns 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 5.4 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 58 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 15 ns 20 ns

Tempo di ritardo all'accensione tipico: 15 ns 10 ns

Modalità canale: Aumento

Tags: SI7308DN-T, SI7308, SI730, SI73, SI7

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7308DN-T1-GE3 Descrizione

***ure Electronics: Si7308DN Series N-Channel 60 V 58 mOhms SMT Power Mosfet - PowerPAK 1212-8

***ical: Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R

***nell: N CHANNEL MOSFET, 60V, 6A, POWERPAK

***ment14 APAC: N CHANNEL MOSFET, 60V, 6A, POWERPAK; Tra; N CHANNEL MOSFET, 60V, 6A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):72mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7308DN-T1-GE3 DISTI # V72:2272_09216327	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	5667	3000:$0.4379 1000:$0.4992 500:$0.6203 250:$0.7107 100:$0.7116 25:$0.8999 10:$0.9018 1:$1.0684
SI7308DN-T1-GE3 DISTI # V36:1790_09216327	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SI7308DN-T1-GE3 DISTI # SI7308DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3686In Stock	1000:$0.6129 500:$0.7669 100:$0.9788 10:$1.2290 1:$1.3900
SI7308DN-T1-GE3 DISTI # SI7308DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3686In Stock	1000:$0.6129 500:$0.7669 100:$0.9788 10:$1.2290 1:$1.3900
SI7308DN-T1-GE3 DISTI # SI7308DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.5576
SI7308DN-T1-GE3 DISTI # 27478980	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	5667	3000:$0.4707 1000:$0.5366 500:$0.6668 250:$0.7640 100:$0.7650 25:$0.9674 14:$0.9694
SI7308DN-T1-GE3 DISTI # 29708274	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.5353
SI7308DN-T1-GE3 DISTI # SI7308DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7308DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4949 6000:$0.4802 12000:$0.4607 18000:$0.4480 30000:$0.4359
SI7308DN-T1-GE3 DISTI # SI7308DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.4A 8-Pin PowerPAK 1212 T/R (Alt: SI7308DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.0779 6000:€0.7729 12000:€0.6269 18000:€0.5539 30000:€0.5299
SI7308DN-T1-GE3 DISTI # 33P5390	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 6A, POWERPAK,Continuous Drain Current Id:6A,Drain Source Voltage Vds:60V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):72mohm,Operating Temperature Range:-55°C to +150°C RoHS Compliant: Yes	0	10000:$0.4320 6000:$0.4420 4000:$0.4590 2000:$0.5100 1000:$0.5610 1:$0.5850
SI7308DN-T1-GE3 DISTI # 26R1916	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 6A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1000:$0.5100 500:$0.6470 250:$0.7000 100:$0.7520 50:$0.8660 25:$0.9800 1:$1.1900
SI7308DN-T1-GE3 DISTI # 781-SI7308DN-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	5928	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100
SI7308DNT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000
SI7308DN-T1-GE3			371
SI7308DN-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK 1212-8	Americas -
SI7308DN-T1-GE3 DISTI # 1871374	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 6A, POWERPAK RoHS: Compliant	0	3000:$0.7540 1000:$0.7690 500:$0.9750 100:$1.1300 10:$1.4800 1:$1.7900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7308DN-T1-GE3 OMO.#: OMO-SI7308DN-T1-GE3	MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7308DN-T1-E3 OMO.#: OMO-SI7308DN-T1-E3	MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7308DN OMO.#: OMO-SI7308DN-1190	Nuovo e originale
	Mfr.#: SI7308DN-T1-E3 OMO.#: OMO-SI7308DN-T1-E3-VISHAY	MOSFET N-CH 60V 6A 1212-8
	Mfr.#: SI7308DN-T1-E3-PBF OMO.#: OMO-SI7308DN-T1-E3-PBF-1190	Nuovo e originale
	Mfr.#: SI7308DN-T1-GE3 OMO.#: OMO-SI7308DN-T1-GE3-VISHAY	MOSFET N-CH 60V 6A 1212-8
	Mfr.#: SI7308DNT1GE3 OMO.#: OMO-SI7308DNT1GE3-1190	Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Disponibilità

Azione:: Available
Su ordine:: 3500
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Il prezzo attuale di SI7308DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,65 USD~~; ~~0,65 USD~~

10: ~~0,62 USD~~; ~~6,16 USD~~

100: ~~0,58 USD~~; ~~58,32 USD~~

500: ~~0,55 USD~~; ~~275,40 USD~~

1000: ~~0,52 USD~~; ~~518,40 USD~~

Iniziare con

SI7308DN-T 3
SI7308 5
SI730 16
SI73 104
SI7 1547

SI7308DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes