IPA126N10N3G

IPA126N10N3G
Mfr. #:
IPA126N10N3G
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA126N10N3G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPA126N10N3G, IPA126N10N3, IPA12, IPA1, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
IPA126N10N3GXK
DISTI # IPA126N10N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$0.8129
  • 1000:$0.7839
  • 2000:$0.7559
  • 3000:$0.7299
  • 5000:$0.7169
IPA126N10N3GInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
1900
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
IPA126N10N3 G
DISTI # 726-IPA126N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
RoHS: Compliant
1000
  • 1:$1.6700
  • 10:$1.4200
  • 100:$1.1300
  • 500:$0.9890
IPA126N10N3GXKSA1
DISTI # N/A
Infineon Technologies AGMOSFET MV POWER MOS0
    IPA126N10N3GXKSA1
    DISTI # 8922242P
    Infineon Technologies AGMOSFET N-CHANNEL 100V 35A OPTIMOS TO220, TU200
    • 50:£0.8790
    • 100:£0.7800
    • 500:£0.6810
    • 1000:£0.5640
    Immagine Parte # Descrizione
    IPA126N10NM3SXKSA1

    Mfr.#: IPA126N10NM3SXKSA1

    OMO.#: OMO-IPA126N10NM3SXKSA1

    MOSFET
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G

    MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1

    MOSFET MV POWER MOS
    IPA126N10N3GXK

    Mfr.#: IPA126N10N3GXK

    OMO.#: OMO-IPA126N10N3GXK-1190

    Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA126N10N3GXKSA1)
    IPA126N10N(126N10N)

    Mfr.#: IPA126N10N(126N10N)

    OMO.#: OMO-IPA126N10N-126N10N--1190

    Nuovo e originale
    IPA126N10N3

    Mfr.#: IPA126N10N3

    OMO.#: OMO-IPA126N10N3-1190

    Nuovo e originale
    IPA126N10N3G

    Mfr.#: IPA126N10N3G

    OMO.#: OMO-IPA126N10N3G-1190

    Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    IPA126N10N3GXKSA1

    Mfr.#: IPA126N10N3GXKSA1

    OMO.#: OMO-IPA126N10N3GXKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 35A TO220-FP
    IPA126N10N3 G

    Mfr.#: IPA126N10N3 G

    OMO.#: OMO-IPA126N10N3-G-126

    IGBT Transistors MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di IPA126N10N3G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,02 USD
    1,02 USD
    10
    0,97 USD
    9,69 USD
    100
    0,92 USD
    91,80 USD
    500
    0,87 USD
    433,50 USD
    1000
    0,82 USD
    816,00 USD
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