NTMD4184PFR2G

Mfr. #:: NTMD4184PFR2G
Produttore:: ON Semiconductor
Descrizione:: MOSFET PFET FTKY S08 30V TR 3.8A
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: NTMD4184PFR2G Scheda dati
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HTML Datasheet:: NTMD4184PFR2G Datasheet NTMD4184PFR2G Datasheet (P4-P6)NTMD4184PFR2G Datasheet (P7)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOIC-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 4 A

Rds On - Resistenza Drain-Source:: 95 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 2.31 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 1.5 mm

Lunghezza:: 5 mm

Serie:: NTMD4184PF

Tipo di transistor:: 1 P-Channel

Larghezza:: 4 mm

Marca:: ON Semiconductor

Tempo di caduta:: 2.8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 12 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 18 ns

Tempo di ritardo di accensione tipico:: 7.2 ns

Unità di peso:: 0.006596 oz

Tags: NTMD4184PF, NTMD41, NTMD4, NTMD, NTM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMD4184PFR2G Descrizione

***ure Electronics: Single P-Channel 30 V 165 mOhm 4.2 nC 2.31 W Silicon SMT Mosfet - SOIC-8

***emi: Dual P-Channel FETKY™ Power MOSFET -30V -4.0A 95mΩ

***nell: MOSFET, P-CH, 30V, 3.3A, 150DEG C, 1.6W; Available until stocks are exhausted

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***p One Stop Global: Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R

***emi: Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***p One Stop: Trans MOSFET N/P-CH 30V 6.8A/4.6A 8-Pin SOIC N T/R

***ure Electronics: Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET, 30V, N+P, 27 m and -64 m , 6.8A and -4.6A, SO-8, TAPE & REEL

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N and P-Channel MOSFET

***nell: MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold

***emi: Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel

***th Star Micro: NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY

***ark: N Channel Mosfet, 30V, 5.7A, Soic, Full Reel

***r Electronics: Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R

***enic: 30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ark: Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No

***ment14 APAC: MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V

***et Europe: Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po

***ark: Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
NTMD4184PFR2G DISTI # V36:1790_07296438	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.1697 1250000:$0.1699 250000:$0.1893 25000:$0.2224 2500:$0.2279
NTMD4184PFR2G DISTI # V72:2272_07296438	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R RoHS: Compliant	0
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSCT-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	484In Stock	1000:$0.2574 500:$0.3331 100:$0.4239 10:$0.5680 1:$0.6600
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSDKR-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	484In Stock	1000:$0.2574 500:$0.3331 100:$0.4239 10:$0.5680 1:$0.6600
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSTR-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	25000:$0.1882 12500:$0.1984 5000:$0.2132 2500:$0.2278
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	25000:€0.1769 15000:€0.1899 10000:€0.2059 5000:€0.2249 2500:€0.2749
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$0.2295 62500:$0.2333 25000:$0.2414 12500:$0.2500 7500:$0.2593 5000:$0.2692 2500:$0.2800
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.1719 15000:$0.1769 10000:$0.1789 5000:$0.1809 2500:$0.1829
NTMD4184PFR2G. DISTI # 29AC9058	ON Semiconductor	Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,Operating Temperature Max:150°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes	0	25000:$0.1720 15000:$0.1770 10000:$0.1790 5000:$0.1810 1:$0.1830
NTMD4184PFR2G DISTI # 863-NTMD4184PFR2G	ON Semiconductor	MOSFET PFET FTKY S08 30V TR 3.8A RoHS: Compliant	2048	1:$0.6100 10:$0.5060 100:$0.3090 1000:$0.2390 2500:$0.2030 10000:$0.1900 25000:$0.1800

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Disponibilità

Azione:: Available
Su ordine:: 2500
Inserisci la quantità:

Il prezzo attuale di NTMD4184PFR2G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,61 USD~~; ~~0,61 USD~~

10: ~~0,51 USD~~; ~~5,06 USD~~

100: ~~0,31 USD~~; ~~30,90 USD~~

1000: ~~0,24 USD~~; ~~239,00 USD~~

Iniziare con

NTMD4184PF 3
NTMD41 5
NTMD4 17
NTMD 58
NTM 810

NTMD4184PFR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes