SI7434DP-T1-GE3

Mfr. #:: SI7434DP-T1-GE3
Produttore:: Vishay
Descrizione:: IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7434DP-T1-GE3 Scheda dati
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Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7434DP-GE3

Unità di peso: 0.017870 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR SO-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR SO-8

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 1.9W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 250V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 2.3A (Ta)

Rds-On-Max-Id-Vgs: 155 mOhm @ 3.8A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Carica-Qg-Vgs: 50nC @ 10V

Pd-Power-Dissipazione: 1.9 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 23 ns

Ora di alzarsi: 23 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 2.3 A

Vds-Drain-Source-Breakdown-Voltage: 250 V

Rds-On-Drain-Source-Resistenza: 155 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 47 ns

Tempo di ritardo all'accensione tipico: 16 ns

Modalità canale: Aumento

Tags: SI7434, SI743, SI74, SI7

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7434DP-T1-GE3 Descrizione

***ure Electronics: Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R

***ark: COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.129ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7434DP-T1-GE3 DISTI # V72:2272_09216354	Vishay Intertechnologies	Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R RoHS: Compliant	3099	3000:$1.4910 1000:$1.5220 500:$1.6900 250:$1.8150 100:$1.9320 25:$2.1629 10:$2.1750 1:$2.4129
SI7434DP-T1-GE3 DISTI # SI7434DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 250V 2.3A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7731In Stock	1000:$1.5296 500:$1.8461 100:$2.3736 10:$2.9540 1:$3.2700
SI7434DP-T1-GE3 DISTI # SI7434DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 250V 2.3A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7731In Stock	1000:$1.5296 500:$1.8461 100:$2.3736 10:$2.9540 1:$3.2700
SI7434DP-T1-GE3 DISTI # SI7434DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 250V 2.3A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$1.3827
SI7434DP-T1-GE3 DISTI # 25790042	Vishay Intertechnologies	Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R RoHS: Compliant	3099	3000:$1.4900 1000:$1.5209 500:$1.6870 250:$1.8120 100:$1.9270 25:$2.1570 10:$2.1680 5:$2.4040
SI7434DP-T1-GE3 DISTI # SI7434DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7434DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.2900 18000:$1.2900 30000:$1.2900
SI7434DP-T1-GE3 DISTI # 26R1922	Vishay Intertechnologies	Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 26R1922) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.7900
SI7434DP-T1-GE3 DISTI # 15R5190	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 3.8A, SOIC,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,No. of Pins:8,On Resistance Rds(on):162mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SI7434DP-T1-GE3 DISTI # 26R1922	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 3.8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	20	1:$3.5800 25:$2.9600 50:$2.7100 100:$2.4500 250:$2.3600 500:$2.1200 1000:$1.7900
SI7434DP-T1-GE3 DISTI # 781-SI7434DP-T1-GE3	Vishay Intertechnologies	MOSFET 250V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	1700	1:$2.9800 10:$2.4700 100:$2.0400 250:$1.9700 500:$1.7700 1000:$1.4900 3000:$1.4200
SI7434DPT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000
SI7434DP-T1-GE3	Vishay Intertechnologies		2333
SI7434DP-T1-GE3	Vishay Intertechnologies		273
SI7434DP-T1-GE3 DISTI # C1S803604026283	Vishay Intertechnologies	Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R RoHS: Compliant	3099	250:$1.8120 100:$1.9270 25:$2.1570 10:$2.1680 1:$2.4040
SI7434DP-T1-GE3 DISTI # 2132253	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 3.8A, SOIC RoHS: Compliant	20	1:£3.1500 25:£2.6000 50:£2.3900 100:£2.1500 250:£2.0700
SI7434DP-T1-GE3	Vishay Intertechnologies	MOSFET 250V Vds 20V Vgs PowerPAK SO-8	Americas -
SI7434DP-T1-GE3 DISTI # 2132253	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 3.8A, SOIC RoHS: Compliant	20	3000:$4.2400 6000:$3.7000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7434DP-T1-E3 OMO.#: OMO-SI7434DP-T1-E3	MOSFET 250V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7434DP-T1-GE3 OMO.#: OMO-SI7434DP-T1-GE3	MOSFET 250V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7434DP-T1-GE3 OMO.#: OMO-SI7434DP-T1-GE3-VISHAY	IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
	Mfr.#: SI7434DP-T1-E3 OMO.#: OMO-SI7434DP-T1-E3-VISHAY	MOSFET N-CH 250V 2.3A PPAK SO-8

Disponibilità

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Su ordine:: 1000
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Il prezzo attuale di SI7434DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,94 USD~~; ~~1,94 USD~~

10: ~~1,84 USD~~; ~~18,38 USD~~

100: ~~1,74 USD~~; ~~174,15 USD~~

500: ~~1,64 USD~~; ~~822,40 USD~~

1000: ~~1,55 USD~~; ~~1 548,00 USD~~

Iniziare con

SI7434 3
SI743 20
SI74 242
SI7 1547

SI7434DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes