GS81302T09E-333

GS81302T09E-333
Mfr. #:
GS81302T09E-333
Produttore:
GSI Technology
Descrizione:
SRAM 1.8 or 1.5V 16M x 9 144M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS81302T09E-333 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS81302T09E-333 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
N
Dimensione della memoria:
144 Mbit
Organizzazione:
16 M x 9
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
1.9 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
755 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
DDR-II
Serie:
GS81302T09E
Tipo:
SigmaDDR-II B2
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
10
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SigmaDDR-II
Tags
GS81302T09E-3, GS81302T09E, GS81302T09, GS81302T0, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Immagine Parte # Descrizione
GS81302R18GE-300I

Mfr.#: GS81302R18GE-300I

OMO.#: OMO-GS81302R18GE-300I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302DT37GE-300I

Mfr.#: GS81302DT37GE-300I

OMO.#: OMO-GS81302DT37GE-300I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302S08GE-300

Mfr.#: GS81302S08GE-300

OMO.#: OMO-GS81302S08GE-300

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T07GE-350

Mfr.#: GS81302T07GE-350

OMO.#: OMO-GS81302T07GE-350

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T08GE-300I

Mfr.#: GS81302T08GE-300I

OMO.#: OMO-GS81302T08GE-300I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T37GE-450

Mfr.#: GS81302T37GE-450

OMO.#: OMO-GS81302T37GE-450

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T11GE-500I

Mfr.#: GS81302T11GE-500I

OMO.#: OMO-GS81302T11GE-500I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302DT06GE-500I

Mfr.#: GS81302DT06GE-500I

OMO.#: OMO-GS81302DT06GE-500I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302TT20E-450M

Mfr.#: GS81302TT20E-450M

OMO.#: OMO-GS81302TT20E-450M

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T20E-500

Mfr.#: GS81302T20E-500

OMO.#: OMO-GS81302T20E-500

SRAM 1.8 or 1.5V 8M x 18 144M
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS81302T09E-333 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
10
142,85 USD
1 428,50 USD
30
132,64 USD
3 979,20 USD
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