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IPD60R600P7ATMA1

IPD60R600P7ATMA1
Mfr. #:
IPD60R600P7ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD60R600P7ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPD60R600P7ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
6 A
Rds On - Resistenza Drain-Source:
490 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
9 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
30 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
19 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
6 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
37 ns
Tempo di ritardo di accensione tipico:
7 ns
Parte # Alias:
IPD60R600P7 SP001606046
Unità di peso:
0.011993 oz
Tags
IPD60R600P7, IPD60R600P, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 600 mOhm 9 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 600V, 6A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descrizione Azione Prezzo
IPD60R600P7ATMA1
DISTI # V72:2272_17072162		Infineon Technologies AGTrans MOSFET N-CH 600V 6A T/R0
    IPD60R600P7ATMA1
    DISTI # IPD60R600P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 6A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2480In Stock
    • 1000:$0.6049
    • 500:$0.7663
    • 100:$0.9276
    • 10:$1.1900
    • 1:$1.3300
    IPD60R600P7ATMA1
    DISTI # IPD60R600P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 6A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2480In Stock
    • 1000:$0.6049
    • 500:$0.7663
    • 100:$0.9276
    • 10:$1.1900
    • 1:$1.3300
    IPD60R600P7ATMA1
    DISTI # IPD60R600P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 6A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 12500:$0.5012
    • 5000:$0.5208
    • 2500:$0.5482
    IPD60R600P7ATMA1
    DISTI # SP001606046    		Infineon Technologies AGLOW POWER_NEW (Alt: SP001606046)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 2500
    • 25000:€0.4429
    • 15000:€0.4769
    • 10000:€0.5169
    • 5000:€0.5639
    • 2500:€0.6899
    IPD60R600P7ATMA1
    DISTI # IPD60R600P7ATMA1    		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD60R600P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.4729
    • 15000:$0.4819
    • 10000:$0.4989
    • 5000:$0.5169
    • 2500:$0.5369
    IPD60R600P7ATMA1
    DISTI # 34AC1682    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes2420
    • 1000:$0.5660
    • 500:$0.7160
    • 250:$0.7630
    • 100:$0.8100
    • 50:$0.8900
    • 25:$0.9700
    • 10:$1.0500
    • 1:$1.2300
    IPD60R600P7ATMA1
    DISTI # 726-IPD60R600P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		4999
    • 1:$1.2200
    • 10:$1.0400
    • 100:$0.8020
    • 500:$0.7090
    • 1000:$0.5600
    IPD60R600P7ATMA1
    DISTI # 2784037    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-2522445
    • 100:£0.7650
    • 10:£1.0600
    • 1:£1.3400
    IPD60R600P7ATMA1
    DISTI # XSKDRABV0021237    		Infineon Technologies AG 
    RoHS: Compliant    		7500 in Stock0 on Order
    • 7500:$0.6533
    • 2500:$0.7000
    IPD60R600P7ATMA1
    DISTI # 2784037    		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-252
    RoHS: Compliant    		2420
    • 5000:$0.7530
    • 1000:$0.7940
    • 500:$0.8390
    • 250:$0.9720
    • 100:$1.1600
    • 25:$1.4100
    • 5:$1.6200
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    		 Switching Voltage Regulators CHEAP TRICK/TPSM84209RKHT
    C2012X8R1C105K125AE

    Mfr.#: C2012X8R1C105K125AE

    OMO.#: OMO-C2012X8R1C105K125AE

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0805 16V 1uF X8R 10% T: 1.25mm
    L135-A589003500000

    Mfr.#: L135-A589003500000

    OMO.#: OMO-L135-A589003500000

    		 High Power LEDs - Single Color PC Amber, 588-592nm
    RAC02-09SC

    Mfr.#: RAC02-09SC

    OMO.#: OMO-RAC02-09SC-RECOM-POWER

    		 Switching Power Supplies CONV AC/DC 2W 80-264VIN 09VOUT
    CMB02070X4702GB200

    Mfr.#: CMB02070X4702GB200

    OMO.#: OMO-CMB02070X4702GB200-835

    		 MELF Resistors 0.4W 47Kohm 2% 0207 MELF 500V
    L135-A589003500000

    Mfr.#: L135-A589003500000

    OMO.#: OMO-L135-A589003500000-LUMILEDS

    		 3535L PC AMBER
    TPSM84209RKHT

    Mfr.#: TPSM84209RKHT

    OMO.#: OMO-TPSM84209RKHT-TEXAS-INSTRUMENTS

    		 DC DC CONVERTER 1.2-6V 15W
    FES10J

    Mfr.#: FES10J

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    		 10A 600V ULTRA FAST RECTIFIER
    Disponibilità
    Azione:
    Available
    Su ordine:
    1987
    Inserisci la quantità:
    Il prezzo attuale di IPD60R600P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,22 USD
    1,22 USD
    10
    1,04 USD
    10,40 USD
    100
    0,80 USD
    80,20 USD
    500
    0,71 USD
    354,50 USD
    1000
    0,56 USD
    560,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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