SIHU6N62E-GE3

SIHU6N62E-GE3
Mfr. #:
SIHU6N62E-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHU6N62E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHU6N62E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHU6N6, SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin IPAK
***nell
MOSFET, N CH, 620V, 6A, TO-251-3
***i-Key
MOSFET N-CH 620V 6A TO-251
***ponent Electronics
TO-251 75PCS/TUBE
***
N-CHANNEL 620V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3-ND
Vishay SiliconixMOSFET N-CH 620V 6A TO-251
Min Qty: 1
Container: Tube
2990In Stock
  • 5025:$0.6650
  • 2550:$0.7000
  • 525:$0.9500
  • 150:$1.1500
  • 75:$1.4000
  • 10:$1.4750
  • 1:$1.6500
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK - Tape and Reel (Alt: SIHU6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6099
  • 18000:$0.6269
  • 12000:$0.6449
  • 6000:$0.6719
  • 3000:$0.6929
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK (Alt: SIHU6N62E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.5529
  • 500:€0.5599
  • 100:€0.5699
  • 50:€0.5779
  • 25:€0.6539
  • 10:€0.8069
  • 1:€1.1249
SIHU6N62E-GE3
DISTI # 78-SIHU6N62E-GE3
Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2995
  • 1:$1.6600
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9050
  • 1000:$0.7150
  • 2500:$0.6670
  • 5000:$0.6340
  • 10000:$0.6100
SIHU6N62E-GE3Vishay Siliconix 2775
    SIHU6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant
    Americas -
      Immagine Parte # Descrizione
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      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3

      MOSFET 800V Vds 30V Vgs IPAK (TO-251)
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3

      MOSFET 620V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3

      MOSFET 650V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3-VISHAY

      RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3-VISHAY

      RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
      SIHU6N62E

      Mfr.#: SIHU6N62E

      OMO.#: OMO-SIHU6N62E-1190

      Nuovo e originale
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3-VISHAY

      MOSFET N-CHAN 800V TO-251
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di SIHU6N62E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,91 USD
      0,91 USD
      10
      0,87 USD
      8,69 USD
      100
      0,82 USD
      82,34 USD
      500
      0,78 USD
      388,80 USD
      1000
      0,73 USD
      731,90 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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