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SIA427DJ-T1-GE3

SIA427DJ-T1-GE3
Mfr. #:
SIA427DJ-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET P-CH 8V 12A SC-70-6
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIA427DJ-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIA427DJ-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
SIA4xxDJ
Confezione
Bobina
Alias ​​parziali
SIA427DJ-GE3
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAK-SC-70-6
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 P-Channel
Pd-Power-Dissipazione
3.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
5 V
Id-Continuo-Scarico-Corrente
- 12 A
Vds-Drain-Source-Breakdown-Voltage
- 8 V
Rds-On-Drain-Source-Resistenza
13 mOhms
Polarità del transistor
Canale P
Qg-Gate-Carica
33 nC
Transconduttanza diretta-Min
37 S
Tags
SIA427D, SIA427, SIA42, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6
***ical
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
MOSFET, P CH, -8V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-1.2V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. Learn MoreView entire Vishay Siliconix Power MOSFET line
Parte # Mfg. Descrizione Azione Prezzo
SIA427DJ-T1-GE3
DISTI # V72:2272_09216832		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 25:$0.3422
  • 10:$0.3437
  • 1:$0.4261
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.2131
SIA427DJ-T1-GE3
DISTI # 30150538		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 37:$0.3422
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1809
  • 6000:$0.1759
  • 12000:$0.1689
  • 18000:$0.1639
  • 30000:$0.1599
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA427DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA427DJ-T1-GE3
    DISTI # 69W7155    		Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:-1.2V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
      SIA427DJ-T1-GE3.
      DISTI # 30AC0109      		Vishay IntertechnologiesP-CHANNEL 8-V (D-S) MOSFET , ROHS COMPLIANT: NO0
      • 1:$0.2090
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK SC-70-6
      RoHS: Compliant      		3000Reel
      • 3000:$0.1720
      SIA427DJ-T1-GE3
      DISTI # 781-SIA427DJ-T1-GE3      		Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant      		197
      • 1:$0.6000
      • 10:$0.4520
      • 100:$0.3360
      • 500:$0.2760
      • 1000:$0.2130
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay Siliconix12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET576
      • 251:$0.1680
      • 57:$0.2400
      • 1:$0.4800
      SIA427DJ-T1-GE3Vishay Semiconductors12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET9
      • 1:$0.4800
      SIA427DJ-T1-GE3
      DISTI # 2459389      		Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK S
      RoHS: Compliant      		0
      • 1:$0.9500
      • 10:$0.7160
      • 100:$0.5320
      • 500:$0.4370
      • 1000:$0.3380
      • 3000:$0.3310
      SIA427DJ-T1-GE3Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant      		Americas -
      • 3000:$0.1700
      • 6000:$0.1610
      • 12000:$0.1560
      • 24000:$0.1530
      SIA427DJ-T1-GE3
      DISTI # C1S803601298676      		Vishay IntertechnologiesMOSFETs2877
      • 250:$0.2658
      • 100:$0.2747
      • 25:$0.3407
      • 10:$0.3422
      Immagine Parte # Descrizione
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3

      		 MOSFET 8V 12A 19W 13mohms @ 4.5V
      SIA427DJ-T1-GE3-CUT TAPE

      Mfr.#: SIA427DJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA427DJ-T1-GE3-CUT-TAPE-1190

      		 Nuovo e originale
      SIA427DJ

      Mfr.#: SIA427DJ

      OMO.#: OMO-SIA427DJ-1190

      		 Nuovo e originale
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3-VISHAY

      		 MOSFET P-CH 8V 12A SC-70-6
      Disponibilità
      Azione:
      Available
      Su ordine:
      3500
      Inserisci la quantità:
      Il prezzo attuale di SIA427DJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,23 USD
      0,23 USD
      10
      0,22 USD
      2,17 USD
      100
      0,21 USD
      20,52 USD
      500
      0,19 USD
      96,90 USD
      1000
      0,18 USD
      182,40 USD
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