BSB012N03LX3GXUMA1

Mfr. #:: BSB012N03LX3GXUMA1
Produttore:: Rochester Electronics, LLC
Descrizione:: - Bulk (Alt: BSB012N03LX3GXUMA1)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSB012N03LX3GXUMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
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Valore attributo

Tags: BSB012N03LX3G, BSB012N0, BSB012, BSB01, BSB0, BSB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSB012N03LX3GXUMA1 Descrizione

***et: Trans MOSFET N-CH 30V 39A 7-Pin WDSON

***i-Key: N-CHANNEL POWER MOSFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***Yang: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel

***ark: Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***et: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R

***ment14 APAC: MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

*** Source Electronics: MOSFET P-CH 40V 50A DPAK / Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK

***roFlash: Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P CH, -40V, -50A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 73.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Operating Temperature Min: -55°C

***ure Electronics: Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS Power Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:60V; On Resistance

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, TO-252-3, RoHS

***nell: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PQFN 5X6 8L, RoHS

***ure Electronics: IRFH9310 Series 30 V 21 A 4.6 mOhm 3.1 W 110 nC P-Channel MOSFET - PQFN-8

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: P Variants: Enhancement mode Power dissipation: 3.1 W

***nell: MOSFET,P CH,DIODE,30V,21A,PQFN56; Transistor Polarity:P Channel; Continuous Drain Current Id:-21A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3700µohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (19-Dec-2011); Current Id Max:-21A; Power Dissipation Pd:3.1W; Voltage Vgs Max:-20V

***emi: N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ

***ure Electronics: N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56

***rchild Semiconductor: The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSB012N03LX3 G DISTI # BSB012N03LX3GTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A 2WDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
BSB012N03LX3GXUMA1 DISTI # BSB012N03LX3GXUMA1	Infineon Technologies AG	- Bulk (Alt: BSB012N03LX3GXUMA1) RoHS: Compliant Min Qty: 334 Container: Bulk	Americas - 0	3340:$0.9519 1670:$0.9699 1002:$1.0039 668:$1.0409 334:$1.0799
BSB012N03LX3 G DISTI # 726-BS726-B012N03LX3	Infineon Technologies AG	MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 RoHS: Compliant	0
BSB012N03LX3GXUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5000	1000:$0.9900 500:$1.0400 100:$1.0800 25:$1.1300 1:$1.2200

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSB012N03LX3 G OMO.#: OMO-BSB012N03LX3-G	MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3
	Mfr.#: BSB012N03LX3 OMO.#: OMO-BSB012N03LX3-1190	- Bulk (Alt: BSB012N03LX3)
	Mfr.#: BSB012N03LX3G OMO.#: OMO-BSB012N03LX3G-1190	Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G)
	Mfr.#: BSB012N03LX3GXUMA1 OMO.#: OMO-BSB012N03LX3GXUMA1-1190	- Bulk (Alt: BSB012N03LX3GXUMA1)
	Mfr.#: BSB012N03LX3 G OMO.#: OMO-BSB012N03LX3-G-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3

Disponibilità

Azione:: Available
Su ordine:: 3500
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Il prezzo attuale di BSB012N03LX3GXUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,48 USD~~; ~~1,48 USD~~

10: ~~1,41 USD~~; ~~14,11 USD~~

100: ~~1,34 USD~~; ~~133,65 USD~~

500: ~~1,26 USD~~; ~~631,15 USD~~

1000: ~~1,19 USD~~; ~~1 188,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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BSB012N03LX3GXUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes