DMN2215UDM-7

Mfr. #:: DMN2215UDM-7
Produttore:: Diodes Incorporated
Descrizione:: IGBT Transistors MOSFET 650mW 20V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: DMN2215UDM-7 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: DMN2215UDM-7 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Diodi incorporati

categoria di prodotto: FET - Array

Serie: DMN22

Confezione: Imballaggio alternativo Digi-ReelR

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: SOT-26

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 650mW

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 188pF @ 10V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 2A

Rds-On-Max-Id-Vgs: 100 mOhm @ 2.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: -

Pd-Power-Dissipazione: 650 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 3.8 ns

Ora di alzarsi: 3.8 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: 2 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1 V

Rds-On-Drain-Source-Resistenza: 165 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 19.6 ns

Tempo di ritardo all'accensione tipico: 8 ns

Transconduttanza diretta-Min: 5 S

Modalità canale: Aumento

Tags: DMN22, DMN2, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN2215UDM-7 Descrizione

***Components: Supplied as a Tape, Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin SOT-26 Diodes Inc DMN2215UDM-7

***ical: Trans MOSFET N-CH 20V 2A Automotive 6-Pin SOT-26 T/R

***p One Stop Global: Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R

***ure Electronics: DUAL N-CHANNEL 20V, 1.4A, 0.1 ohms @ 4.5V, SOT-26

***ied Electronics & Automation: MOSFET N-Channel 20V 2A SOT26

*** Source Electronics: MOSFET 2N-CH 20V 2A SOT-26

***ronik: N+N DUAL-CHAN.-FET 20V 2A SOT26 RoHSconf

***ark: Mosfet, Dual N-Ch, 20V, Sot-26; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 20V, SOT-26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:650mW; Transistor Case Style:SOT-26; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, DOPPIO CAN-N, 20V, SOT-26; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:2A; Tensione Drain Source Vds:20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:650mW; Modello Case Transistor:SOT-26; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

DMN2215UDM-7 Maggiori informazioni

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
DMN2215UDM-7 DISTI # DMN2215UDMDICT-ND	Diodes Incorporated	MOSFET 2N-CH 20V 2A SOT-26 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1In Stock	1000:$0.2559 500:$0.3238 100:$0.4326 10:$0.5690 1:$0.6700
DMN2215UDM-7 DISTI # DMN2215UDMDIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 2A SOT-26 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1In Stock	1000:$0.2559 500:$0.3238 100:$0.4326 10:$0.5690 1:$0.6700
DMN2215UDM-7 DISTI # DMN2215UDMDITR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 2A SOT-26 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2286
DMN2215UDM-7 DISTI # DMN2215UDM-7	Diodes Incorporated	Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R (Alt: DMN2215UDM-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.1385 6000:$0.1323 9000:$0.1268 15000:$0.1233 30000:$0.1216 75000:$0.1184 150000:$0.1154
DMN2215UDM-7 DISTI # DMN2215UDM-7	Diodes Incorporated	Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R (Alt: DMN2215UDM-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1469 6000:€0.1439 12000:€0.1399 18000:€0.1399 30000:€0.1399
DMN2215UDM-7 DISTI # DMN2215UDM-7	Diodes Incorporated	Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R - Tape and Reel (Alt: DMN2215UDM-7) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1349 6000:$0.1289 12000:$0.1229 18000:$0.1169 30000:$0.1139
DMN2215UDM-7 DISTI # 82Y6573	Diodes Incorporated	MOSFET, DUAL N-CH, 20V, SOT-26,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes	319	1000:$0.2260 500:$0.2480 250:$0.2700 100:$0.2920 50:$0.3530 25:$0.4160 10:$0.4770 1:$0.5830
DMN2215UDM-7 DISTI # 70438070	Diodes Incorporated	MOSFET N-Channel 20V 2A SOT26 RoHS: Compliant	0	125:$0.2900 750:$0.2600 1500:$0.2300 3000:$0.2100
DMN2215UDM-7 DISTI # 621-DMN2215UDM-7	Diodes Incorporated	MOSFET 650mW 20V RoHS: Compliant	0	1:$0.5200 10:$0.4340 100:$0.2650 1000:$0.2050 3000:$0.1740
DMN2215UDM-7 DISTI # 7514152P	Zetex / Diodes Inc	MOSFET N-CHANNEL 20V 2A SOT26, RL	275	1500:£0.1590 750:£0.1830 150:£0.2060
DMN2215UDM-7 DISTI # 2543539	Diodes Incorporated	MOSFET, DUAL N-CH, 20V, SOT-26 RoHS: Compliant	170	500:£0.1920 250:£0.2010 100:£0.2100 25:£0.3530 5:£0.3910

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: DMN2215UDM-7

OMO.#: OMO-DMN2215UDM-7

MOSFET 650mW 20V

Mfr.#: DMN2215UDM

OMO.#: OMO-DMN2215UDM-1190

Nuovo e originale

Mfr.#: DMN2215UDM-7

OMO.#: OMO-DMN2215UDM-7-DIODES

IGBT Transistors MOSFET 650mW 20V

Disponibilità

Azione:: Available
Su ordine:: 2000
Inserisci la quantità:

Il prezzo attuale di DMN2215UDM-7 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,17 USD~~; ~~0,17 USD~~

10: ~~0,16 USD~~; ~~1,62 USD~~

100: ~~0,15 USD~~; ~~15,38 USD~~

500: ~~0,15 USD~~; ~~72,60 USD~~

1000: ~~0,14 USD~~; ~~136,70 USD~~

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DMN2215UDM-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes