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FFSB20120A

FFSB20120A
Mfr. #:
FFSB20120A
Produttore:
ON Semiconductor
Descrizione:
Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FFSB20120A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FFSB20120A maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Se - Corrente diretta:
32 A
Vrrm - Tensione inversa ripetitiva:
1200 V
Vf - Tensione diretta:
1.45 V
Ifsm - Corrente diretta in avanti:
135 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
200 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Bobina
Marca:
ON Semiconductor
Pd - Dissipazione di potenza:
333 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
800
sottocategoria:
Diodi e raddrizzatori
Vr - Tensione inversa:
1200 V
Tags
FFSB2, FFSB, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Immagine Parte # Descrizione
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085

 Schottky Diodes & Rectifiers Auto SiC Schottky Diode, 650 V
FFSB20120A

Mfr.#: FFSB20120A

OMO.#: OMO-FFSB20120A

 Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
FFSB20120A-F085

Mfr.#: FFSB20120A-F085

OMO.#: OMO-FFSB20120A-F085-ON-SEMICONDUCTOR

 Silicon Carbide Schottky Diode
FFSB2065B-F085

Mfr.#: FFSB2065B-F085

OMO.#: OMO-FFSB2065B-F085-1190

 650V 20A SIC SBD GEN1.5
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085-1190

 SIC DIODE 650V
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di FFSB20120A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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