BSC010N04LSIATMA1

Mfr. #:: BSC010N04LSIATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC010N04LSIATMA1 Scheda dati
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Maggiori informazioni:: BSC010N04LSIATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: OptiMOS

Confezione: Bobina

Alias parziali: BSC010N04LSI SP000953210

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: TDSON-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Singola Quad Scarico Tripla Sorgente

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 139 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 17 ns

Ora di alzarsi: 48 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 100 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1 V to 2.2 V

Rds-On-Drain-Source-Resistenza: 1.05 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 72 ns

Tempo di ritardo all'accensione tipico: 22 ns

Qg-Gate-Carica: 87 nC

Transconduttanza diretta-Min: 260 S

Tags: BSC010N0, BSC010, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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BSC010N04LSIATMA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

40V OptiMOS Power MOSFETs: Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density. A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC010N04LSIATMA1 DISTI # V72:2272_06378523	Infineon Technologies AG	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R RoHS: Compliant	2289	1000:$1.8070 500:$2.0690 250:$2.2580 100:$2.4530 25:$2.7320 10:$2.8849 1:$3.1509
BSC010N04LSIATMA1 DISTI # BSC010N04LSIATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 37A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3699In Stock	1000:$1.6476 500:$1.9536 100:$2.4125 10:$2.9420 1:$3.3000
BSC010N04LSIATMA1 DISTI # BSC010N04LSIATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 37A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3699In Stock	1000:$1.6476 500:$1.9536 100:$2.4125 10:$2.9420 1:$3.3000
BSC010N04LSIATMA1 DISTI # BSC010N04LSIATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 37A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.4625
BSC010N04LSIATMA1 DISTI # 31006547	Infineon Technologies AG	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$1.6573
BSC010N04LSIATMA1 DISTI # 30743587	Infineon Technologies AG	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R RoHS: Compliant	2289	1000:$1.8040 500:$2.0650 250:$2.2540 100:$2.4480 25:$2.7250 10:$2.8790 5:$3.1429
BSC010N04LSIATMA1 DISTI # BSC010N04LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC010N04LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.3900 10000:$1.3900 20000:$1.2900 30000:$1.2900 50000:$1.2900
BSC010N04LSIATMA1 DISTI # 13AC8324	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes	4456	1:$3.9300 10:$3.5400 25:$3.3400 50:$3.1500 100:$2.9400 250:$2.6800 500:$2.4300 1000:$2.0800
BSC010N04LSI DISTI # 726-BSC010N04LSI	Infineon Technologies AG	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant	238	1:$2.7500 10:$2.3400 100:$2.0300 250:$1.9300 500:$1.7300
BSC010N04LSIATMA1 DISTI # 726-BSC010N04LSIATMA	Infineon Technologies AG	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant	0	1:$2.7500 10:$2.3400 100:$2.0300 250:$1.9300 500:$1.7300
BSC010N04LSIATMA1 DISTI # 2725801	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON RoHS: Compliant	4458	1:£3.7000 10:£2.9300 100:£2.4100
BSC010N04LSIATMA1 DISTI # 2725801	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON RoHS: Compliant	4456	1:$5.2700 10:$4.6900 100:$3.8500 500:$3.1200 1000:$2.6300
BSC010N04LSIATMA1 DISTI # C1S322000406993	Infineon Technologies AG	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R RoHS: Compliant	2289	250:$2.2540 100:$2.4480 25:$2.7250 10:$2.8790 1:$3.1429
BSC010N04LSIATMA1 DISTI # C1S322000318908	Infineon Technologies AG	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$1.4400

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC010N04LS6ATMA1 OMO.#: OMO-BSC010N04LS6ATMA1	MOSFET
	Mfr.#: BSC010N04LSCATMA1 OMO.#: OMO-BSC010N04LSCATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC010N04LSTATMA1 OMO.#: OMO-BSC010N04LSTATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC010N04LSATMA1 OMO.#: OMO-BSC010N04LSATMA1	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
	Mfr.#: BSC010N04LSIATMA1 OMO.#: OMO-BSC010N04LSIATMA1	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
	Mfr.#: BSC010N04LS. OMO.#: OMO-BSC010N04LS--1190	Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
	Mfr.#: BSC010N04LSATMA1 OMO.#: OMO-BSC010N04LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 100A TDSON-8
	Mfr.#: BSC010N04LSCATMA1 OMO.#: OMO-BSC010N04LSCATMA1-INFINEON-TECHNOLOGIES	DIFFERENTIATED MOSFETS
	Mfr.#: BSC010N04LS6ATMA1 OMO.#: OMO-BSC010N04LS6ATMA1-INFINEON-TECHNOLOGIES	TRENCH <= 40V
	Mfr.#: BSC010N04LSIATMA1 OMO.#: OMO-BSC010N04LSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS

Disponibilità

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Il prezzo attuale di BSC010N04LSIATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,94 USD~~; ~~1,94 USD~~

10: ~~1,84 USD~~; ~~18,38 USD~~

100: ~~1,74 USD~~; ~~174,15 USD~~

500: ~~1,64 USD~~; ~~822,40 USD~~

1000: ~~1,55 USD~~; ~~1 548,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

BSC010N0 9
BSC010 16
BSC01 109
BSC0 601
BSC 999

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BSC010N04LSIATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes