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SIA517DJ-T1-GE3

SIA517DJ-T1-GE3
Mfr. #:
SIA517DJ-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N/P-CH 12V 4.5A SC-70-6
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIA517DJ-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIA517DJ-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Array
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SIA517DJ-GE3
Unità di peso
0.000988 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SC-70-6 Dual
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SC-70-6 Dual
Configurazione
1 N-Channel 1 P-Channel
Tipo FET
Canale N e P
Potenza-Max
6.5W
Tipo a transistor
1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss
12V
Ingresso-Capacità-Ciss-Vds
500pF @ 6V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
4.5A
Rds-On-Max-Id-Vgs
29 mOhm @ 5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
15nC @ 8V
Pd-Power-Dissipazione
6.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
10 ns 25 ns
Ora di alzarsi
10 ns 25 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuo-Scarico-Corrente
4.5 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Rds-On-Drain-Source-Resistenza
24 mOhms 50 mOhms
Polarità del transistor
Canale N Canale P
Tempo di ritardo allo spegnimento tipico
22 ns 30 ns
Tempo di ritardo all'accensione tipico
10 ns 30 ns
Modalità canale
Aumento
Tags
SIA517DJ-T1-G, SIA517DJ-T1, SIA517DJ-T, SIA517, SIA51, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor; 4.3 A; 4.5 A; 12V; 6-Pin SC-70
***et Europe
Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
***Components
In a Pack of 20, Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) Vishay SIA517DJ-T1-GE3
***ure Electronics
N- AND P-CHANNEL 12-V (D-S) MOSFET
***i-Key
MOSFET N/P-CH 12V 4.5A SC-70-6
***
N-AND P-CHANNEL 20-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:6.5W Rohs Compliant: No
***ment14 APAC
Prices include import duty and tax. MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6.5W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET CAN N/P, 12V, 4.5A, POWERPAK SC70; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.024ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:6.5W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Parte # Mfg. Descrizione Azione Prezzo
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2387
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 3000:$0.2864
  • 6000:$0.2203
  • 9000:$0.1754
  • 15000:$0.1482
  • 30000:$0.1364
  • 75000:$0.1322
  • 150000:$0.1283
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA517DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2099
  • 6000:$0.1979
  • 12000:$0.1969
  • 18000:$0.1969
  • 30000:$0.1959
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.5819
  • 6000:€0.3969
  • 12000:€0.3419
  • 18000:€0.3159
  • 30000:€0.2939
SIA517DJ-T1-GE3
DISTI # 05W6926		Vishay IntertechnologiesMOSFET, NP CHANNEL, 12V, 4.5A, POWERPAK SC70,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.7500
  • 10:$0.6340
  • 25:$0.5810
  • 50:$0.5280
  • 100:$0.4750
  • 500:$0.3490
  • 1000:$0.2690
SIA517DJ-T1-GE3.
DISTI # 15AC0288		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:6.5W , RoHS Compliant: No0
  • 1:$0.2170
  • 3000:$0.2100
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 70616550		Vishay SiliconixSIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor,4.3 A,4.5 A,12V,6-Pin SC-70
RoHS: Compliant		0
  • 300:$0.5400
  • 600:$0.4800
  • 1500:$0.4200
  • 3000:$0.3800
SIA517DJ-T1-GE3
DISTI # 781-SIA517DJ-GE3		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		5505
  • 1:$0.6700
  • 10:$0.5060
  • 100:$0.3760
  • 500:$0.3090
  • 1000:$0.2390
  • 3000:$0.2170
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 8141225P		Vishay IntertechnologiesTRANS MOSFET N/P-CH 12V 4.5A/4.3A, RL440
  • 200:£0.1960
SIA517DJ-T1-GE3
DISTI # 2889717		Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant		0
  • 5:$1.2400
  • 25:$1.0200
  • 100:$0.8030
  • 250:$0.6600
  • 500:$0.5610
  • 1000:$0.5300
  • 5000:$0.5120
SIA517DJ-T1-GE3
DISTI # 2889717		Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant		0
  • 5:£0.3710
  • 25:£0.3070
  • 100:£0.2750
  • 250:£0.2540
  • 500:£0.2370
SIA517DJ-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		Americas - Stock
    Immagine Parte # Descrizione
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3

    		 MOSFET 12V Vds 8V Vgs PowerPAK SC-70
    SIA517DJ-T1-GE3-CUT TAPE

    Mfr.#: SIA517DJ-T1-GE3-CUT TAPE

    OMO.#: OMO-SIA517DJ-T1-GE3-CUT-TAPE-1190

    		 Nuovo e originale
    SIA517DJ

    Mfr.#: SIA517DJ

    OMO.#: OMO-SIA517DJ-1190

    		 Nuovo e originale
    SIA517DJ-T1-E3

    Mfr.#: SIA517DJ-T1-E3

    OMO.#: OMO-SIA517DJ-T1-E3-1190

    		 Nuovo e originale
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3-VISHAY

    		 MOSFET N/P-CH 12V 4.5A SC-70-6
    SIA517DJ-T1-GE3(EEW)

    Mfr.#: SIA517DJ-T1-GE3(EEW)

    OMO.#: OMO-SIA517DJ-T1-GE3-EEW--1190

    		 Nuovo e originale
    SIA517DJ-T4-GE3

    Mfr.#: SIA517DJ-T4-GE3

    OMO.#: OMO-SIA517DJ-T4-GE3-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di SIA517DJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    0,16 USD
    0,16 USD
    10
    0,15 USD
    1,50 USD
    100
    0,14 USD
    14,21 USD
    500
    0,13 USD
    67,10 USD
    1000
    0,13 USD
    126,30 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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