STW18NM60ND

STW18NM60ND
Mfr. #:
STW18NM60ND
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 600V 13A TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STW18NM60ND Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STW18NM60ND maggiori informazioni STW18NM60ND Product Details
Attributo del prodotto
Valore attributo
Produttore
ST
categoria di prodotto
FET - Single
Serie
MDmesh a canale N
Confezione
Tubo
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
130 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
18 ns
Ora di alzarsi
15.5 ns
Vgs-Gate-Source-Voltage
25 V
Id-Continuo-Scarico-Corrente
13 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
4 V
Rds-On-Drain-Source-Resistenza
290 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
13 ns
Tempo di ritardo all'accensione tipico
55 ns
Qg-Gate-Carica
34 nC
Tags
STW18NM6, STW18NM, STW18, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
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MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
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Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
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IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
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MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descrizione Azione Prezzo
STW18NM60ND
DISTI # 497-13887-5-ND
STMicroelectronicsMOSFET N-CH 600V 13A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
254In Stock
  • 120:$5.1345
  • 30:$5.5967
  • 1:$6.8700
STW18NM60NDSTMicroelectronicsN-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
RoHS: Compliant
300Tube
  • 600:$3.0000
STW18NM60ND
DISTI # 511-STW18NM60ND
STMicroelectronicsMOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
RoHS: Compliant
0
    STW18NM60NDSTMicroelectronicsAVAILABLE1899
      STW18NM60ND
      DISTI # XSFP00000145774
      STMicroelectronics 
      RoHS: Compliant
      202
      • 34:$6.0000
      • 202:$5.4500
      Immagine Parte # Descrizione
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      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
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