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SIR470DP-T1-GE3

SIR470DP-T1-GE3
Mfr. #:
SIR470DP-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 40V 60A PPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR470DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SIR470DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SIR814DP-T1-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SO-8
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SO-8
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
104W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
40V
Ingresso-Capacità-Ciss-Vds
5660pF @ 20V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
60A (Tc)
Rds-On-Max-Id-Vgs
2.3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Carica-Qg-Vgs
155nC @ 10V
Pd-Power-Dissipazione
6.25 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
39 ns
Ora di alzarsi
31 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
60 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.5 V
Rds-On-Drain-Source-Resistenza
2.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
85 ns
Tempo di ritardo all'accensione tipico
40 ns
Transconduttanza diretta-Min
190 S
Modalità canale
Aumento
Tags
SIR470DP-T1-G, SIR470DP-T, SIR470, SIR47, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
***nell
N CHANNEL MOSFET, 40V, 60A, SOIC, FULL R
***ical
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
N CHANNEL MOSFET, 40V, 60A, SOIC; Transi; N CHANNEL MOSFET, 40V, 60A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; No. of Pins:8
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descrizione Azione Prezzo
SIR470DP-T1-GE3
DISTI # V72:2272_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 1:$1.9734
SIR470DP-T1-GE3
DISTI # V36:1790_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$1.3514
SIR470DP-T1-GE3
DISTI # 25789916		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 9:$1.9734
SIR470DP-T1-GE3
DISTI # 26960935		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€1.7659
  • 6000:€1.2369
  • 12000:€1.0199
  • 18000:€0.9059
  • 30000:€0.8569
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2071
  • 1:$0.8239
  • 30:$0.8219
  • 75:$0.8199
  • 150:$0.8179
  • 375:$0.8159
  • 750:$0.8139
  • 1500:$0.8119
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7809
  • 6000:$0.7569
  • 12000:$0.7269
  • 18000:$0.7069
  • 30000:$0.6879
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 69W7167)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 16P3655		Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3.
DISTI # 30AC0120		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3
DISTI # 781-SIR470DP-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		4162
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.5500
  • 3000:$1.5200
SIR470DP-T1-GE3Vishay Intertechnologies 1438
    SIR470DP-T1-GE3
    DISTI # C1S803601363615    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3100
    • 250:$1.2639
    • 100:$1.4043
    • 25:$1.5360
    • 10:$1.7066
    SIR470DP-T1-GE3
    DISTI # C1S806001173655    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3000
    • 3000:$1.1623
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2477
    • 1:$4.4800
    • 10:$3.7200
    • 100:$2.8800
    • 500:$2.5400
    • 1000:$2.4100
    • 3000:$2.4100
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2547
    • 1:£2.1800
    • 10:£1.8200
    • 100:£1.4000
    • 250:£1.3200
    • 500:£1.2300
    SIR470DP-T1-GE3
    DISTI # XSFP00000063578    		Vishay Siliconix 
    RoHS: Compliant    		4038
    • 3000:$1.5200
    • 4038:$1.3800
    SIR470DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas - 24000
    • 3000:$0.7360
    • 6000:$0.6960
    • 12000:$0.6740
    • 24000:$0.6640
    SIR470DP-T1-GE3.Vishay IntertechnologiesMOSFET 40V 60A 104W 2.3mohm @ 10V
    RoHS: Compliant    		Americas - 460
    • 10:$1.3200
    • 100:$1.0160
    • 250:$0.9330
    • 500:$0.8480
    • 1000:$0.7710
    Immagine Parte # Descrizione
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
    SIR470DP

    Mfr.#: SIR470DP

    OMO.#: OMO-SIR470DP-1190

    		 Nuovo e originale
    SIR470DP-T1-E3

    Mfr.#: SIR470DP-T1-E3

    OMO.#: OMO-SIR470DP-T1-E3-1190

    		 Nuovo e originale
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3-VISHAY

    		 MOSFET N-CH 40V 60A PPAK SO-8
    SIR470DP-T1-GE3 BSC017

    Mfr.#: SIR470DP-T1-GE3 BSC017

    OMO.#: OMO-SIR470DP-T1-GE3-BSC017-1190

    		 Nuovo e originale
    SIR470DP-T1-GE3-Z

    Mfr.#: SIR470DP-T1-GE3-Z

    OMO.#: OMO-SIR470DP-T1-GE3-Z-1190

    		 Nuovo e originale
    SIR470DP-T1-GE3.

    Mfr.#: SIR470DP-T1-GE3.

    OMO.#: OMO-SIR470DP-T1-GE3--1190

    		 N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vg
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    Available
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    2000
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