OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FJBE2150DTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
D2PAK-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
800 V
Collettore-tensione di base VCBO:
1.25 kV
Emettitore-tensione di base VEBO:
12 V
Tensione di saturazione collettore-emettitore:
0.25 V
Corrente massima del collettore CC:
2 A
Guadagno larghezza di banda prodotto fT:
5 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 125 C
Serie:
FJBE2150D
Guadagno di corrente CC hFE Max:
35
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
0.5 A
Guadagno base/collettore DC hfe min:
20
Pd - Dissipazione di potenza:
110 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
1000
sottocategoria:
transistor
Unità di peso:
0.066315 oz
Tags
FJB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
***ical
Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
Parte # Mfg. Descrizione Azione Prezzo
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      Immagine Parte # Descrizione
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      3500
      Inserisci la quantità:
      Il prezzo attuale di FJBE2150DTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Iniziare con
      Prodotti più recenti
      • Gate Drivers
        Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • NCP137 700 mA LDO Regulators
        NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • LC717A00AR Touch Sensor
        LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • FDMQ86530L Quad-MOSFET
        FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      More Newest Products
      Top