OMO ElectronicOMO Electronic
Expand menu
0 Carrello

BSZ100N06LS3

BSZ100N06LS3
Mfr. #:
BSZ100N06LS3
Produttore:
Infineon Technologies
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ100N06LS3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
8-PowerVDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TSDSON-8 (3.3x3.3)
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
50W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
60V
Ingresso-Capacità-Ciss-Vds
3500pF @ 30V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
11A (Ta), 20A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
Gate-Carica-Qg-Vgs
45nC @ 10V
Pd-Power-Dissipazione
2.1 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
8 ns
Ora di alzarsi
58 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
20 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistenza
10 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
19 ns
Tempo di ritardo all'accensione tipico
8 ns
Modalità canale
Aumento
Tags
BSZ100N06LS, BSZ100N06L, BSZ100N06, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSZ100N06LS3GATMA1
DISTI # V72:2272_06384814		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1722
  • 3000:$0.3721
  • 1000:$0.3758
  • 500:$0.4625
  • 250:$0.5169
  • 100:$0.5225
  • 25:$0.6506
  • 10:$0.6584
  • 1:$0.7557
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.4025
BSZ100N06LS3GATMA1
DISTI # 31078933		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 10000:$0.3626
  • 5000:$0.3759
BSZ100N06LS3GATMA1
DISTI # 31338070		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5320
BSZ100N06LS3GATMA1
DISTI # 31066196		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4039
BSZ100N06LS3GATMA1
DISTI # 31433908		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 17:$0.7557
BSZ100N06LS3 G
DISTI # 31073348		Infineon Technologies AGBSZ100N06LS3 G
RoHS: Compliant		270
  • 200:$0.5355
  • 100:$0.5534
  • 50:$0.6337
  • 22:$0.9422
BSZ100N06LS3G
DISTI # BSZ100N06LS3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: BSZ100N06LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.3930
  • 10000:$0.3821
  • 15000:$0.3718
  • 25000:$0.3620
  • 50000:$0.3573
  • 125000:$0.3527
  • 250000:$0.3482
BSZ100N06LS3G
DISTI # SP000453672		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: SP000453672)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.5899
  • 10000:€0.5009
  • 20000:€0.4459
  • 30000:€0.4009
  • 50000:€0.3719
BSZ100N06LS3GXT
DISTI # BSZ100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3939
  • 10000:$0.3929
  • 20000:$0.3919
  • 30000:$0.3909
  • 50000:$0.3899
BSZ100N06LS3GATMA1.
DISTI # 25AC6456		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3580
  • 10000:$0.3570
  • 20000:$0.3560
  • 30000:$0.3550
BSZ100N06LS3GATMA1
DISTI # 47W3363		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1800
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
BSZ100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3800
BSZ100N06LS3GATMA1
DISTI # 726-BSZ100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		364
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3 G
DISTI # 726-BSZ100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		347
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1
DISTI # 7528255		Infineon Technologies AGMOSFET N-CHANNEL 60V 11A TSDSON8, PK275
  • 5:£0.6420
  • 50:£0.5120
  • 250:£0.3920
  • 1250:£0.2880
  • 2500:£0.2800
BSZ100N06LS3 GInfineon Technologies AG 295
    BSZ100N06LS3 G
    DISTI # C1S322000698008    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		270
    • 200:$0.4200
    • 100:$0.4340
    • 50:$0.4970
    • 10:$0.7390
    • 5:$0.9120
    BSZ100N06LS3GATMA1
    DISTI # C1S322000721254    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		15000
    • 10000:$0.3626
    • 5000:$0.3759
    BSZ100N06LS3GATMA1
    DISTI # C1S322000463253    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		1733
    • 250:$0.5158
    • 100:$0.5214
    • 25:$0.6491
    • 10:$0.6569
    BSZ100N06LS3GATMA1
    DISTI # C1S322000408964    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.4130
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		1800
    • 1:$1.4400
    • 10:$1.2200
    • 100:$0.9370
    • 500:$0.8280
    • 1000:$0.6540
    • 5000:$0.5800
    BSZ100N06LS3 GInfineon Technologies AGRoHS(ship within 1day)240
    • 1:$1.4300
    • 10:$1.0700
    • 50:$0.8900
    • 100:$0.7100
    • 500:$0.6100
    • 1000:$0.5700
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		2850
    • 5:£0.6550
    • 25:£0.5220
    • 100:£0.4570
    • 250:£0.4000
    • 500:£0.3430
    Immagine Parte # Descrizione
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N06NSATMA1

    Mfr.#: BSZ100N06NSATMA1

    OMO.#: OMO-BSZ100N06NSATMA1

    		 MOSFET MV POWER MOS
    BSZ100N03LS G

    Mfr.#: BSZ100N03LS G

    OMO.#: OMO-BSZ100N03LS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
    BSZ100N03

    Mfr.#: BSZ100N03

    OMO.#: OMO-BSZ100N03-1190

    		 Nuovo e originale
    BSZ100N03LSG

    Mfr.#: BSZ100N03LSG

    OMO.#: OMO-BSZ100N03LSG-1190

    		 Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G-1190

    		 Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G)
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 40A TDSON-8
    BSZ100N06LS3GATMA

    Mfr.#: BSZ100N06LS3GATMA

    OMO.#: OMO-BSZ100N06LS3GATMA-1190

    		 Nuovo e originale
    BSZ100N03LSGATMA1-CUT TAPE

    Mfr.#: BSZ100N03LSGATMA1-CUT TAPE

    OMO.#: OMO-BSZ100N03LSGATMA1-CUT-TAPE-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di BSZ100N06LS3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,00 USD
    0,00 USD
    10
    0,00 USD
    0,00 USD
    100
    0,00 USD
    0,00 USD
    500
    0,00 USD
    0,00 USD
    1000
    0,00 USD
    0,00 USD
    Iniziare con
    Top