We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI4800BDY-T1-GE3 DISTI # V72:2272_09216570 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4727In Stock |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4727In Stock |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4800BDY-T1-GE3 DISTI # 25790146 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4800BDY-T1-GE3 DISTI # 16P3753 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins , RoHS Compliant: Yes | 0 |
|
| SI4800BDY-T1-GE3. DISTI # 16AC0256 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins , RoHS Compliant: No | 0 |
|
| SI4800BDY-T1-GE3 DISTI # 781-SI4800BDY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant | 154 |
|
| SI4800BDYT1GE3 | Vishay Intertechnologies | RoHS: Compliant | Europe - 2500 | |
| SI4800BDY-T1-GE3 DISTI # C1S803603715371 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 2492 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3 |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
|
Mfr.#: SI4800BDY-T1-E3-CUT TAPE |
Nuovo e originale |
|
|
Mfr.#: SI4800BDY-T1-GE3-CUT TAPE |
Nuovo e originale |
|
|
Mfr.#: SI4800BDY-T OMO.#: OMO-SI4800BDY-T-1190 |
Nuovo e originale |
|
|
Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190 |
Nuovo e originale |
|
|
Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190 |
Nuovo e originale |
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
|
|
Mfr.#: SI4800BDY-T1-E3 SOP8 |
Nuovo e originale |
|
|
Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di |
|
|
Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |