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RJH1CF6RDPQ-80#T2

RJH1CF6RDPQ-80#T2
Mfr. #:
RJH1CF6RDPQ-80#T2
Produttore:
Renesas Electronics
Descrizione:
IGBT Transistors IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RJH1CF6RDPQ-80#T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH1CF6RDPQ-80#T2 DatasheetRJH1CF6RDPQ-80#T2 Datasheet (P4-P6)RJH1CF6RDPQ-80#T2 Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Renesas Elettronica
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Confezione:
Tubo
Marca:
Renesas Elettronica
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Tags
RJH1CF, RJH1C, RJH1, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin TO-247 Tube
***i-Key
IGBT 1200V 55A 227.2W TO247
*** Electronic Components
IGBT Transistors IGBT
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / 1200V 55.000A TO-247 ;ROHS COMPLIANT: YES
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***el Electronic
THERMISTOR NTC 10KOHM 3380K 0603
***ment14 APAC
IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AD
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
Inductor Variable Wirewound 2500uH 5% 252KHz 25Q-Factor Automotive
***or
IRG7PH35 - DISCRETE IGBT WITHOUT
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V N-Chan Trench
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
Immagine Parte # Descrizione
RJH1CF6RDPQ-80#T2

Mfr.#: RJH1CF6RDPQ-80#T2

OMO.#: OMO-RJH1CF6RDPQ-80-T2

 IGBT Transistors IGBT
RJH1CF6RDPQ-80

Mfr.#: RJH1CF6RDPQ-80

OMO.#: OMO-RJH1CF6RDPQ-80-1190

 Trans IGBT Chip N-CH 1.2KV 55A 3-Pin TO-247 Tube (Alt: RJH1CF6RDPQ-80)
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di RJH1CF6RDPQ-80#T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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