FQD2N90TM

Mfr. #:: FQD2N90TM
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET 900V N-Channel QFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FQD2N90TM Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 900 V

Id - Corrente di scarico continua:: 1.7 A

Rds On - Resistenza Drain-Source:: 7.2 Ohms

Vgs - Tensione Gate-Source:: 30 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 2.5 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 2.39 mm

Lunghezza:: 6.73 mm

Serie:: FQD2N90

Tipo di transistor:: 1 N-Channel

Tipo:: MOSFET

Larghezza:: 6.22 mm

Marca:: ON Semiconductor / Fairchild

Transconduttanza diretta - Min:: 1.7 S

Tempo di caduta:: 30 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 35 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 20 ns

Tempo di ritardo di accensione tipico:: 15 ns

Unità di peso:: 0.026103 oz

Tags: FQD2N90TM, FQD2N90T, FQD2N9, FQD2N, FQD2, FQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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FQD2N90TM Descrizione

***emi: N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK

***ark: TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA

***nell: MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe

*** Stop Electro: Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω

***ure Electronics: N-Channel 800 V 6.3 Ohm Surface Mount Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET

***ure Electronics: N-Channel 900 V 6.5 Ohm SMT Zener-Protect SuperMESH MosFet TO-252-3

*** Source Electronics: Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 900V 2.1A DPAK

***va Crawler: N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package

***ark: MOSFET, N-CH, 900V, 2.1A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***enic: 900V 2.1A 5´Î@10V1.05A 70W 3.75V@50uA 10pF@25V N Channel 485pF@25V 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3(DPAK) MOSFETs ROHS

***emi: N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK

*** Source Electronics: MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R

*** Stop Electro: Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, QFET®, 800 V, 1.0 A, 20 Ω, DPAK

***ure Electronics: N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

***icroelectronics: N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package

***ure Electronics: N-Channel 900 V 4.8 Ohm Surface Mount SuperMesh Power MosFet - TO-252-3

*** Source Electronics: MOSFET N-CH 900V 3A DPAK / Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R

***ark: MOSFET, N CHANNEL, 900V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET

***ure Electronics: N-Channel 800 V 3.5 O 80 W Surface Mount SuperMESH Power MosFet - TO-252

***ark: MOSFET, N CHANNEL, 800V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FQD2N90TM DISTI # V72:2272_06301251	ON Semiconductor	QF 900V 7.2OHM DPAK	373	250:$0.7060 100:$0.7136 25:$0.9036 10:$0.9132 1:$1.0671
FQD2N90TM DISTI # FQD2N90TMCT-ND	ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4990In Stock	1000:$0.5986 500:$0.7582 100:$0.9777 10:$1.2370 1:$1.4000
FQD2N90TM DISTI # FQD2N90TMDKR-ND	ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4990In Stock	1000:$0.5986 500:$0.7582 100:$0.9777 10:$1.2370 1:$1.4000
FQD2N90TM DISTI # FQD2N90TMTR-ND	ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.5424
FQD2N90TM DISTI # 25743580	ON Semiconductor	QF 900V 7.2OHM DPAK	373	250:$0.7060 100:$0.7136 25:$0.9036 17:$0.9132
FQD2N90TM DISTI # FQD2N90TM	ON Semiconductor	Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N90TM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3999 5000:$0.3969 10000:$0.3919 15000:$0.3869 25000:$0.3779
FQD2N90TM DISTI # FQD2N90TM	ON Semiconductor	Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5909 5000:€0.4839 10000:€0.4429 15000:€0.4089 25000:€0.3799
FQD2N90TM DISTI # FQD2N90TM	ON Semiconductor	Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
FQD2N90TM DISTI # 82C4037	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA ROHS COMPLIANT: YES	0	1:$0.4980 2500:$0.4940 10000:$0.4770 25000:$0.4630
FQD2N90TM DISTI # 512-FQD2N90TM	ON Semiconductor	MOSFET 900V N-Channel QFET RoHS: Compliant	31	1:$1.1600 10:$0.9870 100:$0.7580 500:$0.6700 1000:$0.5290 2500:$0.4690 10000:$0.4510
FQD2N90TM	ON Semiconductor	RoHS: Not Compliant	2394	1000:$0.6700 500:$0.7100 100:$0.7400 25:$0.7700 1:$0.8300
FQD2N90TM DISTI # C1S541901403014	ON Semiconductor	MOSFETs RoHS: Not Compliant	373	250:$0.7060 100:$0.7136 25:$0.9036 10:$0.9132

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Disponibilità

Azione:: Available
Su ordine:: 1992
Inserisci la quantità:

Il prezzo attuale di FQD2N90TM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,10 USD~~; ~~1,10 USD~~

10: ~~0,94 USD~~; ~~9,39 USD~~

100: ~~0,72 USD~~; ~~72,10 USD~~

500: ~~0,64 USD~~; ~~318,50 USD~~

1000: ~~0,50 USD~~; ~~503,00 USD~~

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FQD2N90TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes