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AUIRFS6535TRL

AUIRFS6535TRL
Mfr. #:
AUIRFS6535TRL
Produttore:
Infineon Technologies
Descrizione:
MOSFET Automotive Power MOSFET; 300V 185mOhm
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AUIRFS6535TRL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
300 V
Id - Corrente di scarico continua:
19 A
Rds On - Resistenza Drain-Source:
148 mOhms
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
210 W
Qualificazione:
AEC-Q101
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Larghezza:
6.22 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Parte # Alias:
SP001521690
Unità di peso:
0.139332 oz
Tags
AUIRFS6535T, AUIRFS6, AUIRFS, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
TAPE AND REEL / Automotive MOSFET G10.7, 300V, 185mOhm, 38nC, 19A, D2PAK
***ineon SCT
Automotive Q101 300V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 300V 19A Automotive 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Piezo Injection
***ure Electronics
N-Channel 330 V 180 mOhm Surface Mount Power MOSFET - D2PAK
***icroelectronics
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package
***Yang
Trans MOSFET N-CH 330V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ineon SCT
250V, N-Ch, 100 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) TO-263 T/R
***ment14 APAC
MOSFET, N-CH, AEC-Q100, 250V, 17A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Source Voltage Vds:250V; On
***nell
MOSFET, N-CH, AEC-Q100, 250V, 17A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T Series; Automotive Qualification Standard: AEC-Q100; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
***ical
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK T/R
*** Europe
N-CH SINGLE 250V TO263
***
250V N-CH HEXFET D2-PA
***ical
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 250 V 3.1 W 68 nC Silicon Surface Mount Mosfet - TO-263-3
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
***emi
N-Channel UltraFET® 250V, 25.5A, 131mΩ
***r Electronics
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Nmos D2Pak 250V 130 Mohm / Reel
***roFlash
330V N-channel Mosfet | Mosfet N-ch 330V 25A D2PAK
***nell
MOSFET, N, SMD, TO-263; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:330V; Current, Id Cont:25A; Resistance, Rds On:0.23ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; No. of Pins:2; Power Dissipation:250W; Power Dissipation on 1 Sq. PCB:3.1W; Voltage, Vds Max:330V; Voltage, Vgs th Max:5V
*** Source Electronics
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 250V 17A D2PAK
***icroelectronics
Automotive-grade N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET II Power MOSFET in D2PAK package
***roFlash
N-Channel 250 V 17 A 165 mO 110 W 29.5 nC SMT Power Mosfet - D2PAK
***ure Electronics
N-Channel 250 V 165 mOhm 17 A Surface Mount Power MOSFET - D2PAK
***r Electronics
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***emi
N-Channel Power MOSFET, UniFETTM, 300V, 28A, 129mΩ, D2PAK
***ure Electronics
N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3
*** Source Electronics
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 300V 28A D2PAK
***ment14 APAC
N CHANNEL MOSFET, 300V, 28A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:300V; On Resistance Rds(on):108mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***nell
MOSFET, N-CH, 300V, 28A, TO-263AB-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263AB; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRF644SPBF N-channel MOSFET Transistor; 14 A; 250 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK
***ure Electronics
IRF644S Series N-Channel 250 V 280 mOhm Surface Mount Power Mosfet - TO-263
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 49 / Rise Time ns = 24 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125
***emi
N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK
***ure Electronics
N-Channel 300 V 0.29 Ohm Surface Mount UniFET Mosfet - D2PAK-3
***et
Trans MOSFET N-CH 300V 14A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:300V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Termination Type:SMD; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
Single N-Channel 250 V 235 W 48 nC Silicon Surface Mount Mosfet - TO-263-3
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***et
Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK
***(Formerly Allied Electronics)
MOSFET POWER N-CHANNEL 1.1 OHMS (MAX.) @ DEGC 250 V (MIN.) @ DEGC
***ure Electronics
IRF624S Series N-Channel 250 V 1.1 Ohms Surface Mount Power Mosfet - TO-263
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 50
***nell
MOSFET N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 50W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Alternate Case Style: D2-PAK; Avalanche Single Pulse Energy Eas: 100mJ; Capacitance Ciss Typ: 260pF; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 14A; Reverse Recovery Time trr Typ: 200ns; SMD Marking: F624S; Termination Type: Surface Mount Device; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V
Parte # Mfg. Descrizione Azione Prezzo
AUIRFS6535TRL
DISTI # AUIRFS6535TRLTR-ND		Infineon Technologies AGMOSFET N CH 300V 19A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.7805
AUIRFS6535TRL
DISTI # AUIRFS6535TRL		Infineon Technologies AGTrans MOSFET N-CH 300V 19A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS6535TRL)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.4900
  • 1600:$1.3900
  • 3200:$1.3900
  • 4800:$1.2900
  • 8000:$1.2900
AUIRFS6535TRL
DISTI # 942-AUIRFS6535TRL		Infineon Technologies AGMOSFET Automotive Power MOSFET,300V 185mOhm
RoHS: Compliant		0
  • 1:$2.8600
  • 10:$2.4300
  • 100:$2.1100
  • 250:$2.0000
  • 500:$1.8000
  • 800:$1.5200
  • 2400:$1.4400
  • 4800:$1.3900
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Disponibilità
Azione:
800
Su ordine:
2783
Inserisci la quantità:
Il prezzo attuale di AUIRFS6535TRL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,86 USD
2,86 USD
10
2,43 USD
24,30 USD
100
2,11 USD
211,00 USD
250
2,00 USD
500,00 USD
500
1,80 USD
900,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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