NGTB35N65FL2WG

NGTB35N65FL2WG
Mfr. #:
NGTB35N65FL2WG
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 650V/35A FAST IGBT FSII T
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTB35N65FL2WG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
NGTB35N65FL2WG maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
ON Semiconductor
categoria di prodotto
IGBT - Singolo
Serie
-
Confezione
Tubo
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247
Configurazione
Separare
Potenza-Max
300W
Reverse-Tempo di ripristino-trr
68ns
Corrente-Collettore-Ic-Max
70A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
Sosta sul campo di trincea
Corrente-Collettore-Impulsato-Icm
120A
Vce-su-Max-Vge-Ic
2V @ 15V, 35A
Energia di commutazione
840μJ (on), 280μJ (off)
Gate-Charge
125nC
Td-on-off-25°C
72ns/132ns
Condizione di test
400V, 35A, 10 Ohm, 15V
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
650 V
Collettore-Emettitore-Saturazione-Tensione
2.2 V
Continuo-Collettore-Corrente-a-25-C
70 A
Gate-Emettitore-Corrente di dispersione
200 nA
Massima-tensione-gate-emettitore
20 V
Continuo-Collettore-Corrente-Ic-Max
70 A
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descrizione Azione Prezzo
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND
ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
107In Stock
  • 1020:$1.6464
  • 510:$1.9522
  • 120:$2.2932
  • 30:$2.6460
  • 1:$3.1200
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk
Americas - 0
  • 202:$1.5900
  • 204:$1.5900
  • 406:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$1.3900
  • 10:$1.3900
  • 25:$1.3900
  • 50:$1.3900
  • 100:$1.3900
  • 500:$1.3900
  • 1000:$1.2900
NGTB35N65FL2WG.
DISTI # 61AC1092
ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes21
  • 1000:$1.2900
  • 1:$1.3900
NGTB35N65FL2WG
DISTI # 70547360
ON SemiconductorNGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247
RoHS: Compliant
0
  • 2:$2.9600
  • 20:$2.8200
  • 50:$2.6800
  • 100:$2.5500
  • 200:$2.4200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG
ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant
901
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
210
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
NGTB35N65FL2WG
DISTI # 8427898P
ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
NGTB35N65FL2WGON Semiconductor 2361
    Immagine Parte # Descrizione
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N60FL2W

    Mfr.#: NGTB35N60FL2W

    OMO.#: OMO-NGTB35N60FL2W-1190

    Nuovo e originale
    NGTB35N65FL2

    Mfr.#: NGTB35N65FL2

    OMO.#: OMO-NGTB35N65FL2-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
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    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,13 USD
    2,13 USD
    10
    2,02 USD
    20,24 USD
    100
    1,92 USD
    191,70 USD
    500
    1,81 USD
    905,25 USD
    1000
    1,70 USD
    1 704,00 USD
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