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BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1
Mfr. #:
BSS670S2LH6327XTSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 55V 540mA SOT-23-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSS670S2LH6327XTSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSS670S2LH6327XTSA1 DatasheetBSS670S2LH6327XTSA1 Datasheet (P4-P6)BSS670S2LH6327XTSA1 Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
540 mA
Rds On - Resistenza Drain-Source:
650 mOhms
Vgs th - Tensione di soglia gate-source:
1.2 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
1.7 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
360 mW
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
2.9 mm
Serie:
BSS670S2
Tipo di transistor:
1 N-Channel
Larghezza:
1.3 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
600 mS
Tempo di caduta:
24 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
25 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
21 ns
Tempo di ritardo di accensione tipico:
9 ns
Parte # Alias:
BSS670S2L BSS67S2LH6327XT H6327 SP000928950
Unità di peso:
0.000282 oz
Tags
BSS670S2LH6327X, BSS670S2LH63, BSS670S2LH, BSS670, BSS67, BSS6, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 55V 540MA SOT23 / Trans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 55 V 650 mOhm 1.7 nC OptiMOS™ Enhancement Mode Mosfet - SOT-23
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:540Ma; On Resistance Rds(On):0.346Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Parte # Mfg. Descrizione Azione Prezzo
BSS670S2LH6327XTSA1
DISTI # V72:2272_06391528		Infineon Technologies AGTrans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		7679
  • 6000:$0.0537
  • 3000:$0.0561
  • 1000:$0.0707
  • 500:$0.0777
  • 250:$0.0864
  • 100:$0.1054
  • 25:$0.2209
  • 10:$0.2456
  • 1:$0.3762
BSS670S2LH6327XTSA1
DISTI # BSS670S2LH6327XTSA1CT-ND		Infineon Technologies AGMOSFET N-CH 55V 540MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		33167In Stock
  • 1000:$0.0809
  • 500:$0.1055
  • 100:$0.1592
  • 10:$0.2810
  • 1:$0.3800
BSS670S2LH6327XTSA1
DISTI # BSS670S2LH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET N-CH 55V 540MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		33167In Stock
  • 1000:$0.0809
  • 500:$0.1055
  • 100:$0.1592
  • 10:$0.2810
  • 1:$0.3800
BSS670S2LH6327XTSA1
DISTI # BSS670S2LH6327XTSA1TR-ND		Infineon Technologies AGMOSFET N-CH 55V 540MA SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		33000In Stock
  • 150000:$0.0437
  • 75000:$0.0454
  • 30000:$0.0512
  • 15000:$0.0546
  • 6000:$0.0614
  • 3000:$0.0683
BSS670S2LH6327XTSA1
DISTI # 32892489		Infineon Technologies AGTrans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		69000
  • 3000:$0.0322
BSS670S2LH6327XTSA1
DISTI # 30316558		Infineon Technologies AGTrans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		7679
  • 171:$0.3762
BSS670S2L H6327
DISTI # BSS670S2LH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 55V 0.54A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS670S2LH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.0330
  • 18000:$0.0336
  • 12000:$0.0348
  • 6000:$0.0361
  • 3000:$0.0375
BSS670S2LH6327XTSA1
DISTI # 87X8604		Infineon Technologies AGMOSFET, N-CH, 55V, 0.54A, 0.36W,Transistor Polarity:N Channel,Continuous Drain Current Id:540mA,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.346ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes3000
  • 1000:$0.0790
  • 500:$0.0870
  • 250:$0.0940
  • 100:$0.1020
  • 50:$0.1470
  • 25:$0.1920
  • 10:$0.2370
  • 1:$0.3640
BSS670S2LH6327XTSA1.
DISTI # 25AC6450		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:540mA,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.346ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:360mW,No. of Pins:3Pins RoHS Compliant: Yes0
  • 30000:$0.0330
  • 18000:$0.0340
  • 12000:$0.0350
  • 6000:$0.0370
  • 1:$0.0380
SP000928950
DISTI # 726-SP000928950		Infineon Technologies AGMOSFET N-Ch 55V 540mA SOT-23-3
RoHS: Compliant		9632
  • 1:$0.3600
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
  • 9000:$0.0520
  • 24000:$0.0490
  • 45000:$0.0440
  • 99000:$0.0420
BSS670S2LH6327XT
DISTI # 726-BSS670S2LHXTSA1		Infineon Technologies AGMOSFET N-Ch 55V 540mA SOT-23-3
RoHS: Compliant		36806
  • 1:$0.3600
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
  • 9000:$0.0520
  • 24000:$0.0490
  • 45000:$0.0440
  • 99000:$0.0420
BSS670S2L H6327
DISTI # 726-BSS670S2LH6327		Infineon Technologies AGMOSFET N-Ch 55V 540mA SOT-23-3
RoHS: Compliant		44584
  • 1:$0.3600
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
  • 9000:$0.0520
  • 24000:$0.0490
BSS670S2LH6327XTSA1
DISTI # 726-BSS670S2LH6327XT		Infineon Technologies AGMOSFET N-Ch 55V 540mA SOT-23-3
RoHS: Compliant		17293
  • 1:$0.3600
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
  • 9000:$0.0520
  • 24000:$0.0490
BSS670S2LH6327XTSA1Infineon Technologies AGSingle N-Channel 55 V 650 mOhm 1.7 nC OptiMOS Enhancement Mode Mosfet - SOT-23
RoHS: Not Compliant		1500Cut Tape/Mini-Reel
  • 1:$0.1110
  • 100:$0.0739
  • 250:$0.0682
  • 500:$0.0642
  • 1500:$0.0582
BSS670S2LH6327XTSA1Infineon Technologies AG 223200
  • 17449:$0.0786
  • 7635:$0.0917
  • 1:$0.5240
BSS670S2LH6327XTSA1
DISTI # 8270027		Infineon Technologies AGINFINEON TRANS BSS670S2LH6327XT, RL6500
  • 6000:£0.0410
  • 3000:£0.0420
  • 1000:£0.0560
  • 250:£0.0840
BSS670S2LH6327XTSA1
DISTI # BSS670S2LH6327XTSA		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,0.54A,0.36W,SOT23389
  • 3000:$0.0403
  • 1000:$0.0432
  • 250:$0.0499
  • 50:$0.0564
  • 10:$0.0627
BSS670S2LH6327XTSA1
DISTI # 2432721		Infineon Technologies AGMOSFET, N CH, 55V, 0.54A, SOT-23-3
RoHS: Compliant		20833
  • 24000:$0.0760
  • 9000:$0.0800
  • 3000:$0.0910
  • 1000:$0.1210
  • 100:$0.1560
  • 10:$0.3620
  • 1:$0.5540
BSS670S2LH6327XTSA1
DISTI # XSKDRABV0051745		Infineon Technologies AG 
RoHS: Compliant		21000 in Stock0 on Order
  • 21000:$0.0453
  • 15000:$0.0486
BSS670S2LH6327XTSA1
DISTI # 2432721		Infineon Technologies AGMOSFET, N CH, 55V, 0.54A, SOT-23-344028
  • 500:£0.0622
  • 250:£0.0785
  • 100:£0.0843
  • 25:£0.2020
  • 5:£0.2080
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SMMBT2369ALT1G

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Disponibilità
Azione:
17
Su ordine:
2000
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Prezzo di riferimento (USD)
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0,36 USD
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0,24 USD
2,35 USD
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78,00 USD
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