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IPN80R600P7ATMA1

IPN80R600P7ATMA1
Mfr. #:
IPN80R600P7ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET LOW POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPN80R600P7ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPN80R600P7ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-223-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
510 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
20 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
7.4 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
40 ns
Tempo di ritardo di accensione tipico:
8 ns
Parte # Alias:
IPN80R600P7 SP001665004
Tags
IPN80R6, IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R
***ical
Trans MOSFET N-CH 800V 8A
***ronik
N-CH 800V 8,0A 600mOhm SOT223
***ure Electronics
800V, 8A, 0.60 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ark
LOW POWER_NEW
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, 7.4W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:7.4W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 8A, 7.4W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:7.4W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Parte # Mfg. Descrizione Azione Prezzo
IPN80R600P7ATMA1
DISTI # V72:2272_19084647		Infineon Technologies AGIPN80R600P71450
  • 1000:$0.6341
  • 500:$0.8315
  • 250:$0.8965
  • 100:$0.9307
  • 25:$1.1755
  • 10:$1.1781
  • 1:$1.3516
IPN80R600P7ATMA1
DISTI # V36:1790_19084647		Infineon Technologies AGIPN80R600P70
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1CT-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2683In Stock
    • 1000:$0.8720
    • 500:$1.0805
    • 100:$1.3672
    • 10:$1.7060
    • 1:$1.9100
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1DKR-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2683In Stock
    • 1000:$0.8720
    • 500:$1.0805
    • 100:$1.3672
    • 10:$1.7060
    • 1:$1.9100
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1TR-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.7352
    • 6000:$0.7605
    • 3000:$0.7960
    IPN80R600P7ATMA1
    DISTI # 31271992    		Infineon Technologies AGIPN80R600P73000
    • 30000:$0.5605
    • 18000:$0.5711
    • 12000:$0.5903
    • 6000:$0.6133
    • 3000:$0.6354
    IPN80R600P7ATMA1
    DISTI # 29415779    		Infineon Technologies AGIPN80R600P71450
    • 1000:$0.6817
    • 500:$0.8939
    • 250:$0.9637
    • 100:$1.0005
    • 25:$1.2637
    • 11:$1.2665
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R600P7ATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 3000
    • 3000:$0.6619
    • 6000:$0.6389
    • 12000:$0.6149
    • 18000:$0.5949
    • 30000:$0.5839
    IPN80R600P7ATMA1
    DISTI # SP001665004    		Infineon Technologies AGTrans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R (Alt: SP001665004)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€1.0149
    • 6000:€0.8509
    • 12000:€0.7109
    • 18000:€0.6189
    • 30000:€0.5799
    IPN80R600P7ATMA1
    DISTI # 93AC7130    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2930
    • 1000:$0.5530
    • 500:$0.7000
    • 250:$0.7460
    • 100:$0.7920
    • 50:$0.8690
    • 25:$0.9470
    • 10:$1.0200
    • 1:$1.2100
    IPN80R600P7ATMA1
    DISTI # 726-IPN80R600P7ATMA1    		Infineon Technologies AGMOSFET LOW POWER_NEW
    RoHS: Compliant    		2310
    • 1:$1.5100
    • 10:$1.2800
    • 100:$0.9900
    • 500:$0.8750
    • 1000:$0.6910
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,5.5A,7.4W,PG-SOT2231
    • 1:$1.1200
    • 5:$0.9900
    • 20:$0.8800
    • 100:$0.8000
    • 500:$0.7400
    IPN80R600P7ATMA1
    DISTI # 2986480    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223
    RoHS: Compliant    		2925
    • 5000:$0.9050
    • 1000:$0.9340
    • 500:$1.1400
    • 250:$1.2300
    • 100:$1.3200
    • 25:$1.6000
    • 5:$1.7900
    IPN80R600P7ATMA1
    DISTI # 2986480    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223
    RoHS: Compliant    		2925
    • 500:£0.6430
    • 250:£0.7010
    • 100:£0.7550
    • 25:£0.9570
    • 5:£1.0500
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1987
    Inserisci la quantità:
    Il prezzo attuale di IPN80R600P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,51 USD
    1,51 USD
    10
    1,28 USD
    12,80 USD
    100
    0,99 USD
    99,00 USD
    500
    0,88 USD
    437,50 USD
    1000
    0,69 USD
    691,00 USD
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