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FDMS8680

FDMS8680
Mfr. #:
FDMS8680
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 30V N-CHANNEL
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMS8680 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-56-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
14 A
Rds On - Resistenza Drain-Source:
8.5 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.5 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
PowerTrench
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
6 mm
Serie:
FDMS8680
Tipo di transistor:
1 N-Channel
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
72 S
Tempo di caduta:
2 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
21 ns
Tempo di ritardo di accensione tipico:
9 ns
Unità di peso:
0.002402 oz
Tags
FDMS868, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ
***p One Stop Global
Trans MOSFET N-CH 30V 14A 8-Pin Power 56 T/R
***inecomponents.com
30V, 35A, 7.0M OHM,NCH, POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 30V 14A POWER56
***ser
MOSFETs 30V N-CHANNEL
***ark
Mosfet, N-Ch, 30V, 35A, Power 56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes
***rchild Semiconductor
The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 35A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:50W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 30V, 35A, POWER 56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:35A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:50W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
FDMS8680
DISTI # V79:2366_22402973		ON SemiconductorTrans MOSFET N-CH Si 30V 14A 8-Pin Power 56 T/R14920
  • 9000:$0.5272
  • 6000:$0.5446
  • 3000:$0.5623
  • 1000:$0.5918
  • 500:$0.6871
  • 100:$0.7668
  • 10:$0.8991
  • 1:$1.0068
FDMS8680
DISTI # FDMS8680CT-ND		ON SemiconductorMOSFET N-CH 30V 14A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2640In Stock
  • 1000:$0.8237
  • 500:$0.9941
  • 100:$1.2782
  • 10:$1.5910
  • 1:$1.7600
FDMS8680
DISTI # FDMS8680DKR-ND		ON SemiconductorMOSFET N-CH 30V 14A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2640In Stock
  • 1000:$0.8237
  • 500:$0.9941
  • 100:$1.2782
  • 10:$1.5910
  • 1:$1.7600
FDMS8680
DISTI # FDMS8680TR-ND		ON SemiconductorMOSFET N-CH 30V 14A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.7446
FDMS8680
DISTI # 30312324		ON SemiconductorTrans MOSFET N-CH Si 30V 14A 8-Pin Power 56 T/R14920
  • 9000:$0.5272
  • 6000:$0.5446
  • 3000:$0.5623
  • 1000:$0.5918
  • 500:$0.6871
  • 100:$0.7668
  • 19:$0.8991
FDMS8680
DISTI # FDMS8680		ON SemiconductorTrans MOSFET N-CH 30V 14A 8-Pin Power 56 T/R (Alt: FDMS8680)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
    FDMS8680
    DISTI # FDMS8680    		ON SemiconductorTrans MOSFET N-CH 30V 14A 8-Pin Power 56 T/R (Alt: FDMS8680)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      FDMS8680
      DISTI # FDMS8680      		ON SemiconductorTrans MOSFET N-CH 30V 14A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS8680)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.5689
      • 6000:$0.5659
      • 12000:$0.5579
      • 18000:$0.5509
      • 30000:$0.5379
      FDMS8680
      DISTI # 46AC0803      		ON SemiconductorMOSFET, N-CH, 30V, 35A, POWER 56-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes2745
      • 1:$1.4800
      • 10:$1.2600
      • 25:$1.1800
      • 50:$1.0900
      • 100:$1.0100
      • 250:$0.9440
      • 500:$0.8780
      • 1000:$0.7270
      FDMS8680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		155777
      • 1000:$0.9600
      • 500:$1.0100
      • 100:$1.0500
      • 25:$1.1000
      • 1:$1.1800
      FDMS8680
      DISTI # 512-FDMS8680      		ON SemiconductorMOSFET 30V N-CHANNEL
      RoHS: Compliant      		4422
      • 1:$1.4800
      • 10:$1.2600
      • 100:$1.0100
      • 500:$0.8780
      • 1000:$0.7270
      • 3000:$0.6770
      • 6000:$0.6520
      • 9000:$0.6270
      FDMS8680
      DISTI # C1S541901560115      		ON SemiconductorMOSFETs
      RoHS: Not Compliant      		14920
      • 1000:$0.6107
      • 500:$0.6879
      • 100:$0.7783
      • 10:$0.9059
      FDMS8680
      DISTI # 2825182      		ON SemiconductorMOSFET, N-CH, 30V, 35A, POWER 56-8
      RoHS: Compliant      		2745
      • 5:$2.9400
      • 25:$2.5200
      • 100:$1.7200
      • 250:$1.4100
      • 500:$1.1600
      • 1000:$1.0700
      • 5000:$1.0100
      FDMS8680
      DISTI # 2825182      		ON SemiconductorMOSFET, N-CH, 30V, 35A, POWER 56-8
      RoHS: Compliant      		2745
      • 5:£1.0800
      • 25:£0.9840
      • 100:£0.7890
      • 250:£0.7380
      • 500:£0.6860
      Immagine Parte # Descrizione
      AT24CM02-SSHM-B

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      		 EEPROM 1.7-5.5V, 1MHz, Ind Tmp, 8-SOIC-N
      INA219AIDCNR

      Mfr.#: INA219AIDCNR

      OMO.#: OMO-INA219AIDCNR

      		 Current & Power Monitors & Regulators 0-Drift Bi-Dir Crnt Pwr Monitor
      WB-IMX6S

      Mfr.#: WB-IMX6S

      OMO.#: OMO-WB-IMX6S

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      INA219AIDCNR

      Mfr.#: INA219AIDCNR

      OMO.#: OMO-INA219AIDCNR-TEXAS-INSTRUMENTS

      		 Current & Power Monitors & Regulators 0-Drift Bi-Dir Crnt Pwr Monito
      WB-IMX6S

      Mfr.#: WB-IMX6S

      OMO.#: OMO-WB-IMX6S-WANDBOARD

      		 WANDBOARD I.MX6 SOLO EVALUATION KIT - Bulk (Alt: WB-IMX6S)
      PAC1934T-I/J6CX

      Mfr.#: PAC1934T-I/J6CX

      OMO.#: OMO-PAC1934T-I-J6CX-MICROCHIP-TECHNOLOGY

      		 QUAD HIGH-SIDE CURRENT SENSOR
      ABS07-32.768KHZ-T

      Mfr.#: ABS07-32.768KHZ-T

      OMO.#: OMO-ABS07-32-768KHZ-T-ABRACON

      		 Crystals 32.768KHz 12.5pf 3.2 x 1.5 x 0.9mm
      AT24CM02-SSHM-B

      Mfr.#: AT24CM02-SSHM-B

      OMO.#: OMO-AT24CM02-SSHM-B-MICROCHIP-TECHNOLOGY

      		 IC EEPROM 2M I2C 1MHZ 8SOIC
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di FDMS8680 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,48 USD
      1,48 USD
      10
      1,26 USD
      12,60 USD
      100
      1,01 USD
      101,00 USD
      500
      0,88 USD
      439,00 USD
      1000
      0,73 USD
      727,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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