BSC100N06LS3GATMA1

Mfr. #:: BSC100N06LS3GATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 60V 50A TDSON-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC100N06LS3GATMA1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Infineo

categoria di prodotto: FET - Single

Serie: OptiMOS

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: BSC100N06LS3 BSC100N06LS3GXT G SP000453664

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: 8-PowerTDFN

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PG-TDSON-8

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 50W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Ingresso-Capacità-Ciss-Vds: 3500pF @ 30V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 12A (Ta), 50A (Tc)

Rds-On-Max-Id-Vgs: 10 mOhm @ 50A, 10V

Vgs-th-Max-Id: 2.2V @ 23μA

Gate-Carica-Qg-Vgs: 45nC @ 10V

Pd-Power-Dissipazione: 50 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 8 ns

Ora di alzarsi: 58 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuo-Scarico-Corrente: 50 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1.7 V

Rds-On-Drain-Source-Resistenza: 10 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 19 ns

Tempo di ritardo all'accensione tipico: 8 ns

Qg-Gate-Carica: 15 nC

Transconduttanza diretta-Min: 63 S

Modalità canale: Aumento

Tags: BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC100N06LS3GATMA1 Descrizione

***ark: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

*** Source Electronics: OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

***ure Electronics: Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21549In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21549In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	20000In Stock	5000:$0.4243
BSC100N06LS3GATMA1 DISTI # BSC100N06LS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3339 10000:$0.3219 20000:$0.3099 30000:$0.2999 50000:$0.2939
BSC100N06LS3GATMA1 DISTI # 47W3311	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	3102	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350 2500:$0.4110 10000:$0.3860
BSC100N06LS3 G DISTI # 726-BSC100N06LS3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350
BSC100N06LS3GATMA1 DISTI # 726-BSC100N06LS3GATM	Infineon Technologies AG	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350
BSC100N06LS3GATMA1	Infineon Technologies AG	Single N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	10000Reel	5000:$0.3550
BSC100N06LS3GATMA1 DISTI # 7545298	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK	1395	5:£0.5760 50:£0.3560 250:£0.2900 1250:£0.2780 2500:£0.2740
BSC100N06LS3GATMA1 DISTI # 7545298P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL	1270	50:£0.3560 250:£0.2900 1250:£0.2780 2500:£0.2740
BSC100N06LS3GATMA1 DISTI # 2212844	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant	7982	5:£0.4240 25:£0.3630 100:£0.2870 250:£0.2780 500:£0.2680
BSC100N06LS3GATMA1 DISTI # 2212844	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, 8TDSON RoHS: Compliant	3102	1:$1.5300 10:$1.2900 100:$0.9870

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
	Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
	Mfr.#: BSC100N06LS OMO.#: OMO-BSC100N06LS-1190	Nuovo e originale
	Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G-1190	Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
	Mfr.#: BSC100N06LS3G OMO.#: OMO-BSC100N06LS3G-1190	60V,50A,N Channel Power MOSFET
	Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 50A TDSON-8
	Mfr.#: BSC100N06LS3GXT OMO.#: OMO-BSC100N06LS3GXT-1190	Nuovo e originale

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Azione:: Available
Su ordine:: 3000
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Il prezzo attuale di BSC100N06LS3GATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,44 USD~~; ~~0,44 USD~~

10: ~~0,42 USD~~; ~~4,19 USD~~

100: ~~0,40 USD~~; ~~39,68 USD~~

500: ~~0,37 USD~~; ~~187,35 USD~~

1000: ~~0,35 USD~~; ~~352,70 USD~~

Iniziare con

BSC100N06LS3 4
BSC100N06 5
BSC100N0 16
BSC100 21
BSC10 33
BSC1 141
BSC 999

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BSC100N06LS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes