OMO ElectronicOMO Electronic
Expand menu
0 Carrello

SI7114ADN-T1-GE3

SI7114ADN-T1-GE3
Mfr. #:
SI7114ADN-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 30V 35A PPAK 1212-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7114ADN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI7114ADN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI7114ADN-GE3
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR 1212-8
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR 1212-8
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
39W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
1230pF @ 15V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
35A (Tc)
Rds-On-Max-Id-Vgs
7.5 mOhm @ 18A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Carica-Qg-Vgs
32nC @ 10V
Pd-Power-Dissipazione
3.7 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
10 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
35 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
8.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
20 ns
Tempo di ritardo all'accensione tipico
20 ns
Transconduttanza diretta-Min
50 S
Modalità canale
Aumento
Tags
SI7114A, SI7114, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7114ADN-T1-GE3 N-channel MOSFET Transistor; 18 A; 30 V; 8-Pin PowerPAK 1212
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 30V 35A PPAK 1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.3A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Parte # Mfg. Descrizione Azione Prezzo
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3828
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R (Alt: SI7114ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.3800
  • 6000:$0.2923
  • 9000:$0.2326
  • 15000:$0.1966
  • 30000:$0.1809
  • 75000:$0.1754
  • 150000:$0.1701
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7114ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3489
  • 6000:$0.3379
  • 12000:$0.3249
  • 18000:$0.3159
  • 30000:$0.3069
SI7114ADN-T1-GE3
DISTI # SI7114ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R (Alt: SI7114ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.6909
  • 6000:€0.4719
  • 12000:€0.4059
  • 18000:€0.3749
  • 30000:€0.3489
SI7114ADN-T1-GE3
DISTI # 16P3822		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):10mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$0.4000
  • 3000:$0.4000
SI7114ADN-T1-GE3.
DISTI # 16AC0261		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:18.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):10mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3.7W,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.4000
  • 3000:$0.4000
SI7114ADN-T1-GE3
DISTI # 70459557		Vishay SiliconixMOSFET N-CH 30V 35A PPAK 1212-8
RoHS: Compliant		0
  • 3000:$0.4630
  • 6000:$0.4470
SI7114ADN-T1-GE3
DISTI # 781-SI7114ADN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		0
  • 1:$0.9600
  • 10:$0.7660
  • 100:$0.5810
  • 500:$0.4800
  • 1000:$0.4010
  • 3000:$0.4000
SI7114ADN-T1-GE3
DISTI # 2478964		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL
RoHS: Compliant		0
  • 3000:$0.6060
SI7114ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas -
    SI7114ADN-T1-GE3
    DISTI # 2478964    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 11.7A, POWERPAK,
    RoHS: Compliant    		0
    • 3000:£0.3520
    Immagine Parte # Descrizione
    SI7114ADN-T1-GE3

    Mfr.#: SI7114ADN-T1-GE3

    OMO.#: OMO-SI7114ADN-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    SI7114ADN

    Mfr.#: SI7114ADN

    OMO.#: OMO-SI7114ADN-1190

    		 Nuovo e originale
    SI7114ADN-T1-GE3

    Mfr.#: SI7114ADN-T1-GE3

    OMO.#: OMO-SI7114ADN-T1-GE3-VISHAY

    		 MOSFET N-CH 30V 35A PPAK 1212-8
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di SI7114ADN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,60 USD
    0,60 USD
    10
    0,57 USD
    5,70 USD
    100
    0,54 USD
    54,00 USD
    500
    0,51 USD
    255,00 USD
    1000
    0,48 USD
    480,00 USD
    Iniziare con
    Top