SI4778DY-T1-GE3

SI4778DY-T1-GE3
Mfr. #:
SI4778DY-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 25V 8A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4778DY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4778DY-T1-GE3 DatasheetSI4778DY-T1-GE3 Datasheet (P4-P6)SI4778DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SI4778, SI477, SI47, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 2.4 W 18 nC Silicon Surface Mount Mosfet - SOIC-8
***et
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: No
Parte # Mfg. Descrizione Azione Prezzo
SI4778DY-T1-GE3
DISTI # SI4778DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9In Stock
  • 1:$0.6500
SI4778DY-T1-GE3
DISTI # SI4778DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9In Stock
  • 1:$0.6500
SI4778DY-T1-GE3
DISTI # SI4778DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4778DY-T1-GE3.
    DISTI # 23AC9600
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:5W,No. of Pins:8Pins RoHS Compliant: No0
      SI4778DY-T1-GE3
      DISTI # 781-SI4778DY-GE3
      Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
      RoHS: Compliant
      0
        Immagine Parte # Descrizione
        SI4778DY-T1-E3

        Mfr.#: SI4778DY-T1-E3

        OMO.#: OMO-SI4778DY-T1-E3

        MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
        SI4778DY

        Mfr.#: SI4778DY

        OMO.#: OMO-SI4778DY-1190

        Nuovo e originale
        SI4778DY-T1-E3

        Mfr.#: SI4778DY-T1-E3

        OMO.#: OMO-SI4778DY-T1-E3-VISHAY

        MOSFET N-CH 25V 8A 8-SOIC
        SI4778DY-T1-GE3

        Mfr.#: SI4778DY-T1-GE3

        OMO.#: OMO-SI4778DY-T1-GE3-VISHAY

        MOSFET N-CH 25V 8A 8-SOIC
        Disponibilità
        Azione:
        Available
        Su ordine:
        5500
        Inserisci la quantità:
        Il prezzo attuale di SI4778DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,98 USD
        0,98 USD
        10
        0,93 USD
        9,26 USD
        100
        0,88 USD
        87,75 USD
        500
        0,83 USD
        414,40 USD
        1000
        0,78 USD
        780,00 USD
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