AS4C1G8D3LA-10BCNTR

AS4C1G8D3LA-10BCNTR
Mfr. #:
AS4C1G8D3LA-10BCNTR
Produttore:
Alliance Memory
Descrizione:
DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C1G8D3LA-10BCNTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C1G8D3LA-10BCNTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM - DDR3
Larghezza bus dati:
8 bit
Organizzazione:
1 G x 8
Pacchetto/custodia:
FBGA-78
Dimensione della memoria:
8 Gbit
Frequenza massima di clock:
933 MHz
Tensione di alimentazione - Max:
1.45 V
Tensione di alimentazione - Min:
1.283 V
Corrente di alimentazione - Max:
125 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 95 C
Serie:
AS4C1G8D3LA
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
2000
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
AS4C1G8D3LA-10
Tags
AS4C1G8D3LA-10, AS4C1G8D, AS4C1G, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
Immagine Parte # Descrizione
AS4C1G8D3LA-10BCNTR

Mfr.#: AS4C1G8D3LA-10BCNTR

OMO.#: OMO-AS4C1G8D3LA-10BCNTR

DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
AS4C1G8D3LA-12BCN

Mfr.#: AS4C1G8D3LA-12BCN

OMO.#: OMO-AS4C1G8D3LA-12BCN

DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET
AS4C1G8D3LA-12BIN

Mfr.#: AS4C1G8D3LA-12BIN

OMO.#: OMO-AS4C1G8D3LA-12BIN

DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT
AS4C1G8D3LA-12BCNTR

Mfr.#: AS4C1G8D3LA-12BCNTR

OMO.#: OMO-AS4C1G8D3LA-12BCNTR

DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET
AS4C1G8D3LA-12BINTR

Mfr.#: AS4C1G8D3LA-12BINTR

OMO.#: OMO-AS4C1G8D3LA-12BINTR

DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT
AS4C1G8D3LA-10BIN

Mfr.#: AS4C1G8D3LA-10BIN

OMO.#: OMO-AS4C1G8D3LA-10BIN

DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT
AS4C1G8D3LA-10BCN

Mfr.#: AS4C1G8D3LA-10BCN

OMO.#: OMO-AS4C1G8D3LA-10BCN

DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
AS4C1G8D3LA-10BINTR

Mfr.#: AS4C1G8D3LA-10BINTR

OMO.#: OMO-AS4C1G8D3LA-10BINTR

DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di AS4C1G8D3LA-10BCNTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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