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IPB024N08N5ATMA1

IPB024N08N5ATMA1
Mfr. #:
IPB024N08N5ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 80V TO263-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB024N08N5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IPB024N08N5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
IPB024N08N5 SP001227044
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
214 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
15 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
120 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.2 V
Rds-On-Drain-Source-Resistenza
3.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
46 ns
Tempo di ritardo all'accensione tipico
22 ns
Qg-Gate-Carica
99 nC
Transconduttanza diretta-Min
89 S
Modalità canale
Aumento
Tags
IPB024, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
***ronik
N-CH 80V 120A 2,4mOhm TO263-3
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB024N08N5ATMA1
DISTI # V72:2272_06378736		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 1:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.2392
IPB024N08N5ATMA1
DISTI # 27074090		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.9584
IPB024N08N5ATMA1
DISTI # 26195054		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 4:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB024N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.9900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IPB024N08N5ATMA1
DISTI # SP001227044		Infineon Technologies AGMV POWER MOS (Alt: SP001227044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.8900
  • 2000:€1.7900
  • 4000:€1.7900
  • 6000:€1.5900
  • 10000:€1.4900
IPB024N08N5ATMA1
DISTI # IPB024N08N5		Infineon Technologies AGMV POWER MOS (Alt: IPB024N08N5)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$2.0771
  • 2000:$2.0194
  • 3000:$1.9649
  • 5000:$1.9132
  • 10000:$1.8883
  • 25000:$1.8641
  • 50000:$1.8405
IPB024N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		1900
  • 1000:$1.7500
  • 500:$1.8400
  • 100:$1.9200
  • 25:$2.0000
  • 1:$2.1500
IPB024N08N5ATMA1
DISTI # 726-IPB024N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		943
  • 1:$3.8500
  • 10:$3.2800
  • 100:$2.8400
  • 250:$2.7000
  • 500:$2.4200
Immagine Parte # Descrizione
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1

 MOSFET N-Ch 80V 120A D2PAK-2
IPB024N08N5

Mfr.#: IPB024N08N5

OMO.#: OMO-IPB024N08N5-1190

 N-CH 80V 120A 2,4mOhm TO263-3
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V TO263-3
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di IPB024N08N5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,54 USD
2,54 USD
10
2,41 USD
24,13 USD
100
2,29 USD
228,58 USD
500
2,16 USD
1 079,40 USD
1000
2,03 USD
2 031,80 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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