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FGA60N60UFDTU

FGA60N60UFDTU
Mfr. #:
FGA60N60UFDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V 60A FIELD STOP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA60N60UFDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA60N60UFDTU maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
120 A
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGA60N60UFD
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA60N60U, FGA60N60, FGA60N6, FGA60N, FGA60, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-3PN Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,120A,TO3PN; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W
*** Source Electronics
IGBT 600V 60A 378W TO247 / Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB
***ure Electronics
IGBT Transistors N-Ch/ 60A 600V FS
***ark
Fspigbt To247 60A 600V Rohs Compliant: Yes
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essentia
***ical
Trans IGBT Chip N=-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:378W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:378W
***ical
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, SINGLE, 600V, 120A, TO-3P-3; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-3P; No. of Pi
***ical
Trans IGBT Chip N-CH 600V 150A 330000mW 3-Pin(3+Tab) TO-247AD
***i-Key
IGBT 600V 150A 330W TO247
***el Electronic
IGBT Modules GenX3 600V IGBTs
***el Nordic
Contact for details
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Parte # Mfg. Descrizione Azione Prezzo
FGA60N60UFDTU
DISTI # 27141541		ON Semiconductor600V, 60A FIELD STOP IGBT498
  • 4:$4.4154
FGA60N60UFDTU
DISTI # FGA60N60UFDTU-ND		ON SemiconductorIGBT 600V 120A 298W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		446In Stock
  • 2700:$3.5000
  • 900:$4.0688
  • 450:$4.4625
  • 25:$5.3812
  • 10:$5.6440
  • 1:$6.2500
FGA60N60UFDTU
DISTI # FGA60N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-3P(N) Tube (Alt: FGA60N60UFDTU)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 5
  • 1000:€2.8900
  • 500:€3.0900
  • 100:€3.1900
  • 50:€3.3900
  • 25:€3.4900
  • 10:€3.5900
  • 1:€3.9900
FGA60N60UFDTU
DISTI # FGA60N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGA60N60UFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.9900
  • 2700:$3.0900
  • 450:$3.1900
  • 900:$3.1900
  • 1800:$3.1900
FGA60N60UFDTU
DISTI # 64R3072		ON SemiconductorTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-3P(N) Tube - Bulk (Alt: 64R3072)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.4600
FGA60N60UFDTU
DISTI # 64R3072		ON SemiconductorIGBT Single Transistor, General Purpose, 120 A, 600 V, 298 W, 600 V, TO-3PN, 382
  • 250:$4.4600
  • 100:$4.6500
  • 50:$4.9900
  • 25:$5.3300
  • 10:$5.5800
  • 1:$6.1500
FGA60N60UFDTU
DISTI # 512-FGA60N60UFDTU		ON SemiconductorIGBT Transistors 600V 60A FIELD STOP
RoHS: Compliant		364
  • 1:$5.9400
  • 10:$5.3700
  • 25:$5.1200
  • 100:$4.4500
  • 250:$4.2500
  • 500:$3.8700
  • 1000:$3.3700
FGA60N60UFDTU
DISTI # 7599254P		ON SemiconductorTRANSISTOR IGBT N-CH 600V 120A TO-3P(N), TU473
  • 10:£4.5400
FGA60N60UFDTU
DISTI # 7599254		ON SemiconductorTRANSISTOR IGBT N-CH 600V 120A TO-3P(N), EA7
  • 10:£4.5400
  • 1:£5.0300
FGA60N60UFDTU
DISTI # XSKDRABV0037674		ON SEMICONDUCTOR 
RoHS: Compliant		360 in Stock0 on Order
  • 360:$4.6800
  • 100:$5.0200
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Disponibilità
Azione:
364
Su ordine:
2347
Inserisci la quantità:
Il prezzo attuale di FGA60N60UFDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,94 USD
5,94 USD
10
5,37 USD
53,70 USD
25
5,12 USD
128,00 USD
100
4,45 USD
445,00 USD
250
4,25 USD
1 062,50 USD
500
3,87 USD
1 935,00 USD
1000
3,37 USD
3 370,00 USD
2500
3,25 USD
8 125,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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