FZ400R33KL2CB5NOSA1

Mfr. #:: FZ400R33KL2CB5NOSA1
Produttore:: Infineon Technologies
Descrizione:: MOD IGBT MED PWR A-IHV73-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FZ400R33KL2CB5NOSA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: FZ400R33KL, FZ400R3, FZ400R, FZ40, FZ4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ400R33KL2CB5NOSA1 Descrizione

***ical: Trans IGBT Module N-CH 3300V 750A 4900000mW Automotive 5-Pin IHV73-6 Tray

***S: new, original packaged

***el Electronic: MOD IGBT MED PWR A-IHV73-6

***i-Key: IGBT MOD 3300V 750A 4900W

***el Nordic: Contact for details

***ineon: 3300V IHV 73mm single switch IGBT Module with IGBT2 Low Loss and 10.2kV isolation - The best solution for your traction and industry applications. | Summary of Features: High reliability and robust module construction (6.5kV housing); 10.2kV insulation | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***ical: Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 560A 1785000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: IGBT TRENCH DUAL SRC 1200V SP6

***el Electronic: IGBT MODULE 1200V 560A 1785W SP6

***ure Electronics: APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel

***ical: Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: POWER MOD IGBT TRENCH PH LEG SP6

***ure Electronics: APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 600V 600A SP6

***el Electronic: IGBT MODULE 600V 700A 2300W SP6

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FZ400R33KL2CB5NOSA1 DISTI # FZ400R33KL2CB5NOSA1-ND	Infineon Technologies AG	MOD IGBT MED PWR A-IHV73-6 RoHS: Not compliant Min Qty: 4 Container: Tray	Temporarily Out of Stock	4:$1,424.4225
FZ400R33KL2CB5NOSA1 DISTI # FZ400R33KL2CB5NOSA1	Infineon Technologies AG	TRACTION - Trays (Alt: FZ400R33KL2CB5NOSA1) RoHS: Not Compliant Min Qty: 4 Container: Tray	Americas - 0	40:$1,351.0000 24:$1,384.0000 16:$1,419.0000 8:$1,456.0000 4:$1,475.0000
FZ400R33KL2C_B5 DISTI # 641-FZ400R33KL2C_B5	Infineon Technologies AG	IGBT Modules N-CH 3.3KV 750A	6	1:$1,401.9900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FZ400R33KL2C_B5 OMO.#: OMO-FZ400R33KL2C-B5	IGBT Modules N-CH 3.3KV 750A
	Mfr.#: FZ400R33KL2C_B5 OMO.#: OMO-FZ400R33KL2C-B5-125	IGBT Modules N-CH 3.3KV 750A
	Mfr.#: FZ400R33KF1 OMO.#: OMO-FZ400R33KF1-1190	Nuovo e originale
	Mfr.#: FZ400R33KF2 OMO.#: OMO-FZ400R33KF2-1190	Nuovo e originale
	Mfr.#: FZ400R33KF2_B5 OMO.#: OMO-FZ400R33KF2-B5-1190	Nuovo e originale
	Mfr.#: FZ400R33KL2C OMO.#: OMO-FZ400R33KL2C-1190	Nuovo e originale
	Mfr.#: FZ400R33KL2CB5NOSA1 OMO.#: OMO-FZ400R33KL2CB5NOSA1-INFINEON-TECHNOLOGIES	MOD IGBT MED PWR A-IHV73-6

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di FZ400R33KL2CB5NOSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,00 USD~~; ~~2,00 USD~~

10: ~~2,00 USD~~; ~~20,00 USD~~

100: ~~1,00 USD~~; ~~100,00 USD~~

500: ~~1,00 USD~~; ~~500,00 USD~~

1000: ~~1,00 USD~~; ~~1 000,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

FZ400R33KL 3
FZ400R3 6
FZ400R 43
FZ40 44
FZ4 98

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FZ400R33KL2CB5NOSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes