NE3511S02-T1C-A

NE3511S02-T1C-A
Mfr. #:
NE3511S02-T1C-A
Produttore:
CEL
Descrizione:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE3511S02-T1C-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3511S02-T1C-A DatasheetNE3511S02-T1C-A Datasheet (P4-P6)NE3511S02-T1C-A Datasheet (P7-P9)NE3511S02-T1C-A Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
CEL
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
S0-2
Tecnologia
GaAs
Tipo a transistor
HFET
Guadagno
13.5 dB
Pd-Power-Dissipazione
165 mW
Massima temperatura di esercizio
+ 125 C
Frequenza operativa
12 GHz
Id-Continuo-Scarico-Corrente
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Polarità del transistor
Canale N
Transconduttanza diretta-Min
65 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Figura di rumore NF
0.3 dB
Tags
NE3511, NE351, NE35, NE3
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
NE3511S02-T1C-A
DISTI # NE3511S02-T1C-ATR-ND
California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3511S02-T1C-A
    DISTI # NE3511S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3511S02-T1C-A
      DISTI # NE3511S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3511S02-T1C-A
        DISTI # 551-NE3511S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant
        0
          Immagine Parte # Descrizione
          NE3511S02A

          Mfr.#: NE3511S02A

          OMO.#: OMO-NE3511S02A-1190

          Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A)
          NE3511S02-A

          Mfr.#: NE3511S02-A

          OMO.#: OMO-NE3511S02-A-CEL

          RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
          NE3511S02-T1C-A

          Mfr.#: NE3511S02-T1C-A

          OMO.#: OMO-NE3511S02-T1C-A-CEL

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          Disponibilità
          Azione:
          Available
          Su ordine:
          4000
          Inserisci la quantità:
          Il prezzo attuale di NE3511S02-T1C-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          1,12 USD
          1,12 USD
          10
          1,07 USD
          10,69 USD
          100
          1,01 USD
          101,25 USD
          500
          0,96 USD
          478,15 USD
          1000
          0,90 USD
          900,00 USD
          A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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