STGB30H60DFB

Mfr. #:: STGB30H60DFB
Produttore:: STMicroelectronics
Descrizione:: IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STGB30H60DFB Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: STGB30H60DFB maggiori informazioni STGB30H60DFB Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: D2PAK-3

Stile di montaggio:: SMD/SMT

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 600 V

Tensione di saturazione collettore-emettitore:: 1.55 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 60 A

Pd - Dissipazione di potenza:: 260 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Serie:: STGB30H60DFB

Confezione:: Bobina

Corrente continua del collettore Ic Max:: 60 A

Marca:: STMicroelectronics

Corrente di dispersione gate-emettitore:: +/- 250 nA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 1000

sottocategoria:: IGBT

Tags: STGB30H60, STGB30H, STGB30, STGB3, STGB, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGB30H60DFB Descrizione

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R

***i-Key: TRENCH GATE FIELD-STOP IGBT, HB

***ark: Ptd High Voltage

STGB30H60DFB Maggiori informazioni

HB Series Trench Gate Field-Stop IGBTs: STMicroelectronics HB Series Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These new HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STGB30H60DFB DISTI # V36:1790_16116215	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.9696 500000:$0.9712 100000:$1.0610 10000:$1.1960 1000:$1.2180
STGB30H60DFB DISTI # V72:2272_17630171	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
STGB30H60DFB DISTI # 497-16518-1-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	987In Stock	500:$1.5141 100:$1.8429 10:$2.2930 1:$2.5500
STGB30H60DFB DISTI # 497-16518-6-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	987In Stock	500:$1.5141 100:$1.8429 10:$2.2930 1:$2.5500
STGB30H60DFB DISTI # 497-16518-2-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.0920 2000:$1.1340 1000:$1.2180
STGB30H60DFB DISTI # STGB30H60DFB	STMicroelectronics	IGBTs (Alt: STGB30H60DFB) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.9419 6000:€1.0099 4000:€1.0869 2000:€1.1779 1000:€1.4139
STGB30H60DFB DISTI # STGB30H60DFB	STMicroelectronics	IGBTs - Tape and Reel (Alt: STGB30H60DFB) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0217 18000:$1.0430 12000:$1.0914 6000:$1.1429 3000:$1.1994
STGB30H60DFB DISTI # 84Y8600	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$1.0000
STGB30H60DFB. DISTI # 23AC9922	STMicroelectronics	PTD HIGH VOLTAGE	0	30000:$1.0300 18000:$1.0500 12000:$1.1000 6000:$1.1500 1:$1.2000
STGB30H60DFB DISTI # 511-STGB30H60DFB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed RoHS: Compliant	0	1:$2.3500 10:$2.0000 100:$1.6000 500:$1.4000 1000:$1.1600 2000:$1.0800 5000:$1.0400

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	Mfr.#: STGD25N40LZAG OMO.#: OMO-STGD25N40LZAG	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: IKB40N65EF5ATMA1 OMO.#: OMO-IKB40N65EF5ATMA1	IGBT Transistors 40A 650V TRENCHSTOP 5 ultra fast F5 IGBT copacked with 40A Rapid 1 diode
	Mfr.#: FGB40T65SPD-F085 OMO.#: OMO-FGB40T65SPD-F085	IGBT Transistors Trench IGBT
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	Mfr.#: STGB30H60DLFB OMO.#: OMO-STGB30H60DLFB	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	Mfr.#: FCPF067N65S3 OMO.#: OMO-FCPF067N65S3	MOSFET SuperFET3 650V 67 mOhm
	Mfr.#: RCS0603680RFKEA OMO.#: OMO-RCS0603680RFKEA	Thick Film Resistors - SMD 0.25watt 680ohms 1% 100ppm
	Mfr.#: IKB40N65EF5ATMA1 OMO.#: OMO-IKB40N65EF5ATMA1-INFINEON-TECHNOLOGIES	40A 650V TRENCHSTOP5 ULTRA FAST
	Mfr.#: STGB30H60DLFB OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB

Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di STGB30H60DFB è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,35 USD~~; ~~2,35 USD~~

10: ~~2,00 USD~~; ~~20,00 USD~~

100: ~~1,60 USD~~; ~~160,00 USD~~

500: ~~1,40 USD~~; ~~700,00 USD~~

Iniziare con

STGB30H60 4
STGB30H 5
STGB30 13
STGB3 21
STGB 130
STG 909

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STGB30H60DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes