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S25FL512SDPBHV210

S25FL512SDPBHV210
Mfr. #:
S25FL512SDPBHV210
Produttore:
Cypress Semiconductor
Descrizione:
NOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S25FL512SDPBHV210 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
S25FL512SDPBHV210 maggiori informazioni S25FL512SDPBHV210 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore di cipresso
Categoria di prodotto:
NOR Flash
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-24
Serie:
S25FL512S
Dimensione della memoria:
512 Mbit
Tipo di interfaccia:
SPI
Organizzazione:
64 M x 8
Tipo di temporizzazione:
asincrono
Larghezza bus dati:
8 bit
Tensione di alimentazione - Min:
1.65 V
Tensione di alimentazione - Max:
3.6 V
Corrente di alimentazione - Max:
75 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 105 C
Confezione:
Vassoio
Tipo di memoria:
NÉ
Velocità:
66 MHz
Architettura:
Eclisse
Marca:
Semiconduttore di cipresso
Sensibile all'umidità:
sì
Tipologia di prodotto:
NOR Flash
Quantità confezione di fabbrica:
338
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
Specchio Bit
Tags
S25FL512SDPBHV2, S25FL512SDPBHV, S25FL512SDPB, S25FL512SDP, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING
***i-Key
IC FLASH 512MBIT SPI/QUAD 24BGA
***ress Semiconductor SCT
Serial NOR Flash Memory, 256 Mbit Density, FBGA-24, RoHS
***et
NOR Flash Serial-SPI 3V 256Mbit 256M x 1bit 24-Pin BGA Tray
***ark
Tray Pkged / 256-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, Bga-Fab024 In Tray Packing, With Reset#
***ical
NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns Automotive 24-Pin BGA Tray
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING, WITH RESET#
***-Wing Technology
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 66MHz 8ns 8mm 0.0003A
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus - 64Kb, Bga-Fab024 In Tray Packing, With Reset#
***i-Key
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descrizione Azione Prezzo
S25FL512SDPBHV210
DISTI # S25FL512SDPBHV210-ND		Cypress SemiconductorIC FLASH 512M SPI 66MHZ 24BGA
RoHS: Compliant
Min Qty: 338
Container: Tray		Temporarily Out of Stock
  • 338:$6.8887
S25FL512SDPBHV210
DISTI # 727-S25FL512SDPBHV21		Cypress SemiconductorNOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
RoHS: Compliant		0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
  • 500:$6.4700
  • 1000:$6.0200
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Disponibilità
Azione:
245
Su ordine:
2228
Inserisci la quantità:
Il prezzo attuale di S25FL512SDPBHV210 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,71 USD
10,71 USD
10
9,81 USD
98,10 USD
25
8,92 USD
223,00 USD
50
8,50 USD
425,00 USD
100
8,03 USD
803,00 USD
250
7,42 USD
1 855,00 USD
500
6,47 USD
3 235,00 USD
1000
6,02 USD
6 020,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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