OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SIRA90DP-T1-GE3

SIRA90DP-T1-GE3
Mfr. #:
SIRA90DP-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 30V 100A POWERPAKSO
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIRA90DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SIRA9, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 100A POWERPAKSO
***ark
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):650µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Parte # Mfg. Descrizione Azione Prezzo
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.5264
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA90DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4819
  • 30000:$0.4949
  • 18000:$0.5089
  • 12000:$0.5309
  • 6000:$0.5469
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA90DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.5249
  • 500:€0.5319
  • 100:€0.5409
  • 50:€0.5489
  • 25:€0.6209
  • 10:€0.7659
  • 1:€1.0679
SIRA90DP-T1-GE3
DISTI # 20AC3876		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4780
  • 6000:$0.4890
  • 4000:$0.5080
  • 2000:$0.5640
  • 1000:$0.6210
  • 1:$0.6470
SIRA90DP-T1-GE3
DISTI # 15AC8636		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):650µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes0
  • 500:$0.7220
  • 250:$0.7810
  • 100:$0.8390
  • 50:$0.9270
  • 25:$1.0100
  • 10:$1.1000
  • 1:$1.3300
SIRA90DP-T1-GE3
DISTI # 78-SIRA90DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 100A Id Qg 48nC Typ.
RoHS: Compliant		967
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8310
  • 500:$0.7150
  • 1000:$0.5640
SIRA90DP-T1-GE3
DISTI # 2749593		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO0
  • 500:£0.5610
  • 250:£0.6070
  • 100:£0.6530
  • 25:£0.8490
  • 5:£0.9410
SIRA90DP-T1-GE3
DISTI # 2749593		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO
RoHS: Compliant		0
  • 1000:$0.8850
  • 500:$0.9380
  • 250:$1.1100
  • 100:$1.3400
  • 10:$1.7200
  • 1:$2.0700
Immagine Parte # Descrizione
SIRA90DP-T1-RE3

Mfr.#: SIRA90DP-T1-RE3

OMO.#: OMO-SIRA90DP-T1-RE3

 MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3

 MOSFET 30V Vds 100A Id Qg 48nC Typ.
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3-VISHAY

 MOSFET N-CH 30V 100A POWERPAKSO
SIRA90DP-T1-RE3

Mfr.#: SIRA90DP-T1-RE3

OMO.#: OMO-SIRA90DP-T1-RE3-VISHAY

 MOSFET N-CH 30V 100A POWERPAKSO
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di SIRA90DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,72 USD
0,72 USD
10
0,68 USD
6,81 USD
100
0,65 USD
64,53 USD
500
0,61 USD
304,75 USD
1000
0,57 USD
573,60 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Top