FQP15P12

FQP15P12
Mfr. #:
FQP15P12
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 120V P-Channel QFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQP15P12 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
120 V
Id - Corrente di scarico continua:
15 A
Rds On - Resistenza Drain-Source:
200 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
100 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
QFET
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQP15P12
Tipo di transistor:
1 P-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
9.5 S
Tempo di caduta:
80 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
100 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
80 ns
Tempo di ritardo di accensione tipico:
15 ns
Parte # Alias:
FQP15P12_NL
Unità di peso:
0.063493 oz
Tags
FQP15, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,p-Channel,120V V(Br)Dss,15A I(D),to-220Ab Rohs Compliant: Yes
***emi
P-Channel Power MOSFET, QFET®, -120 V, -15 A, 0.2 Ω, DPAK
***ical
Trans MOSFET P-CH 120V 15A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single P-Channel 120 V 0.2 Ohm 38 nC 100 W DMOS Flange Mount Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ark
Mosfet Transistor, N Channel, 7 A, 120 V, 160 Mohm, 10 V, 3 V Rohs Compliant: Yes
***icroelectronics
N-Channel 120V - 0.16Ohm - 14A - TO-220 LOOhm GATE CHARGE StripFET(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 120V 14A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
14 A 120 V 0.18 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N CH, 120V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Source Voltage Vds:120V; On Resistance
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 120V, 14A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 120V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***i-Key
MOSFET N-CH 150V 14.4A TO-220
***el Electronic
IC REG LINEAR 5V 300MA 8HTSOP-J
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
Trans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail
***ser
MOSFETs 100V N-Ch QFET Logic Level
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 120V 32A TO-220
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd:
***ark
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:120V; Case style:TO-220; Current, Id cont:32A; Current, Idm pulse:128A; Power, Pd:150W; Resistance, Rds on:0.043R; Length / Height, RoHS Compliant: Yes
***icroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220
***ure Electronics
N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220
***enic
100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
***eco
Transistor MOSFET Negative Channel 100 Volt 26A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 100 V 0.06 O 30 nC Flange Mount STripFET™ II Power MosFet - TO-220
***ponent Stockers USA
26 A 100 V 0.06 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 26A UltraFET II TO220
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 26A; Device Marking: STP24NF10; Operating Temperature Min: -55°C; Pulse Current Idm: 104A; Voltage Vds Typ: 100V
Parte # Mfg. Descrizione Azione Prezzo
FQP15P12
DISTI # 26637394
ON SemiconductorP-CH/120V/15A/QFET1000
  • 2000:$0.5965
  • 1000:$0.5992
FQP15P12
DISTI # FQP15P12-ND
ON SemiconductorMOSFET P-CH 120V 15A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.7755
FQP15P12
DISTI # FQP15P12
ON SemiconductorTrans MOSFET P-CH 120V 15A 3-Pin TO-220 Tube (Alt: FQP15P12)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Asia - 0
    FQP15P12
    DISTI # FQP15P12
    ON SemiconductorTrans MOSFET P-CH 120V 15A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FQP15P12)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 1000:$0.6139
    • 2000:$0.6099
    • 4000:$0.6019
    • 6000:$0.5939
    • 10000:$0.5799
    FQP15P12
    DISTI # 60J0862
    ON SemiconductorTRANSISTOR,MOSFET,P-CHANNEL,120V V(BR)DSS,15A I(D),TO-220AB ROHS COMPLIANT: YES0
    • 1:$1.6900
    • 10:$1.3200
    • 100:$1.0300
    • 1000:$0.7050
    • 2000:$0.7010
    • 10000:$0.6630
    • 24000:$0.6440
    • 50000:$0.6300
    FQP15P12Fairchild Semiconductor CorporationPower Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    1779
    • 1000:$0.6800
    • 500:$0.7200
    • 100:$0.7500
    • 25:$0.7800
    • 1:$0.8400
    FQP15P12
    DISTI # 512-FQP15P12
    ON SemiconductorMOSFET 120V P-Channel QFET
    RoHS: Compliant
    557
    • 1:$1.5500
    • 10:$1.3200
    • 100:$1.0200
    • 500:$0.8940
    • 1000:$0.7050
    FQP15P12Fairchild Semiconductor Corporation15 A, 120 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB6
    • 4:$1.3500
    • 1:$1.8000
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    THERMISTOR NTC 10KOHM 3977K BEAD
    Disponibilità
    Azione:
    420
    Su ordine:
    2403
    Inserisci la quantità:
    Il prezzo attuale di FQP15P12 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,25 USD
    1,25 USD
    10
    1,06 USD
    10,60 USD
    100
    0,82 USD
    82,10 USD
    500
    0,73 USD
    363,00 USD
    1000
    0,57 USD
    573,00 USD
    2000
    0,51 USD
    1 016,00 USD
    10000
    0,49 USD
    4 890,00 USD
    25000
    0,47 USD
    11 825,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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