AFT26H250-24SR6

Mfr. #:: AFT26H250-24SR6
Produttore:: NXP / Freescale
Descrizione:: RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: AFT26H250-24SR6 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore:: NXP

Categoria di prodotto:: Transistor MOSFET RF

RoHS:: Y

Tecnologia:: si

Confezione:: Bobina

Tipo:: MOSFET di potenza RF

Marca:: NXP / Freescale

Sensibile all'umidità:: sì

Tipologia di prodotto:: Transistor MOSFET RF

Quantità confezione di fabbrica:: 150

sottocategoria:: MOSFET

Parte # Alias:: 935323547128

Unità di peso:: 0.302494 oz

Tags: AFT26H25, AFT26H2, AFT26H, AFT26, AFT2, AFT

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AFT26H250-24SR6 Descrizione

***ca Corp: RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Semiconductors SCT: Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V, CFM6F, RoHS

***W: RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1800

*** Electronic Components: RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz

***ical: Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R

***el Electronic: Linear Voltage Regulator, LDO, Low Power, 100 mA Vout: 5.0 V; 0.5%

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: FET RF NCH 65V 2690MHZ NI12304S2

***or: FET RF 2CH 65V 2.5GHZ NI1230S-4

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ure Electronics: P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23

***ical: Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

***ark: N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No

***SIT Distribution GmbH: Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ark: Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes

***ure Electronics: N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523

***ment14 APAC: MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523

***nell: MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
AFT26H250-24SR6 DISTI # AFT26H250-24SR6-ND	NXP Semiconductors	FET RF 2CH 65V 2.5GHZ NI1230S-4 RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$113.3879
AFT26H250-24SR6 DISTI # AFT26H250-24SR6	NXP Semiconductors	Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R (Alt: AFT26H250-24SR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Europe - 0	150:€123.5900 300:€118.5900 600:€114.0900 900:€105.8900 1500:€98.8900
AFT26H250-24SR6 DISTI # AFT26H250-24SR6	NXP Semiconductors	Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R - Tape and Reel (Alt: AFT26H250-24SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	150:$124.1900 300:$119.3900 600:$114.6900 900:$110.4900 1500:$108.3900
AFT26H250-24SR6 DISTI # 841-AFT26H250-24SR6	NXP Semiconductors	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz RoHS: Compliant	0	1:$136.1300 5:$133.4900 10:$129.0800 25:$123.6100 50:$121.9200 100:$113.3900 150:$110.8400
AFT26H250-24SR6 DISTI # AFT26H250-24SR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	150:$127.8800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: AFT26H250-24SR6 OMO.#: OMO-AFT26H250-24SR6	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H200W03SR6 OMO.#: OMO-AFT26H200W03SR6	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H250W03SR6 OMO.#: OMO-AFT26H250W03SR6	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H250-24SR6 OMO.#: OMO-AFT26H250-24SR6-NXP-SEMICONDUCTORS	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H250W03SR6 OMO.#: OMO-AFT26H250W03SR6-NXP-SEMICONDUCTORS	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H200W03SR6 OMO.#: OMO-AFT26H200W03SR6-NXP-SEMICONDUCTORS	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
	Mfr.#: AFT26H200W03S OMO.#: OMO-AFT26H200W03S-1190	Nuovo e originale
	Mfr.#: AFT26H250-24S OMO.#: OMO-AFT26H250-24S-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di AFT26H250-24SR6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~136,13 USD~~; ~~136,13 USD~~

5: ~~133,49 USD~~; ~~667,45 USD~~

10: ~~129,08 USD~~; ~~1 290,80 USD~~

25: ~~123,61 USD~~; ~~3 090,25 USD~~

50: ~~121,92 USD~~; ~~6 096,00 USD~~

100: ~~113,39 USD~~; ~~11 339,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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AFT26H250-24SR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes