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IRFS59N10DPBF

IRFS59N10DPBF
Mfr. #:
IRFS59N10DPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 100V 59A D2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFS59N10DPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS59N10DPBF DatasheetIRFS59N10DPBF Datasheet (P4-P6)IRFS59N10DPBF Datasheet (P7-P9)IRFS59N10DPBF Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Tubo
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
200 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
90 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
59 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
25 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
20 ns
Tempo di ritardo all'accensione tipico
16 ns
Qg-Gate-Carica
76 nC
Modalità canale
Aumento
Tags
IRFS59, IRFS5, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;D2Pak;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 100V 0.025 Ohm 76 nC HEXFET® Power Mosfet - D2PAK
***eco
Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 2+ Tab D2pak
*** Source Electronics
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 59A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:59A; Current Temperature:25°C; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:236A; SMD Marking:59N10; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Parte # Mfg. Descrizione Azione Prezzo
IRFS59N10DPBF
DISTI # V36:1790_13891310		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 1:$2.6210
IRFS59N10DPBF
DISTI # IRFS59N10DPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 59A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1806In Stock
  • 1000:$2.2095
  • 500:$2.5765
  • 100:$3.1270
  • 10:$3.7620
  • 1:$4.1800
IRFS59N10DPBF
DISTI # 30572210		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 5:$2.6210
IRFS59N10DPBF
DISTI # 27574694		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		500
  • 300:$0.9670
  • 200:$1.0084
  • 100:$1.0536
  • 50:$1.1765
IRFS59N10DPBF
DISTI # SP001571716		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK (Alt: SP001571716)
RoHS: Compliant
Min Qty: 1		Europe - 8000
  • 1:€2.6900
  • 10:€2.2900
  • 25:€2.2900
  • 50:€2.2900
  • 100:€1.8900
  • 500:€1.6900
  • 1000:€1.3900
IRFS59N10DPBF
DISTI # 70017522		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.025Ohm,ID 59A,D2Pak,PD 200W,VGS +/-30V
RoHS: Compliant		0
  • 3200:$3.6400
  • 6400:$3.5670
  • 16000:$3.4580
  • 32000:$3.3120
  • 80000:$3.0940
IRFS59N10DPBF
DISTI # 942-IRFS59N10DPBF		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 25mOhms 76nC
RoHS: Compliant		3718
  • 1:$3.2500
  • 10:$2.7600
  • 100:$2.3900
  • 250:$2.2700
  • 500:$2.0300
  • 1000:$1.7100
  • 2000:$1.6300
IRFS59N10DPBFInfineon Technologies AGPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		350
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational RectifierPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3900
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational Rectifier 
RoHS: Compliant		Europe - 600
    IRFS59N10DPBFInfineon Technologies AGINSTOCK710
      IRFS59N10DPBF
      DISTI # 9102302      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		383
      • 1:£1.0400
      • 10:£0.7850
      • 100:£0.7120
      • 250:£0.6980
      IRFS59N10DPBF
      DISTI # 9102302      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		38
      • 1:$5.1500
      • 10:$4.3800
      • 100:$3.8100
      • 250:$3.6200
      • 500:$3.2300
      • 1000:$2.7200
      • 2000:$2.6000
      IRFS59N10DPBF
      DISTI # C1S322000495854      		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
      RoHS: Compliant      		4000
      • 500:$1.7620
      • 250:$1.9430
      • 100:$2.0760
      • 10:$2.3210
      • 1:$2.6210
      Immagine Parte # Descrizione
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP

      		 MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DTRLP-CUT TAPE

      Mfr.#: IRFS59N10DTRLP-CUT TAPE

      OMO.#: OMO-IRFS59N10DTRLP-CUT-TAPE-1190

      		 Nuovo e originale
      IRFS59N10DTRRP

      Mfr.#: IRFS59N10DTRRP

      OMO.#: OMO-IRFS59N10DTRRP-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRRPBF

      Mfr.#: IRFS59N10DTRRPBF

      OMO.#: OMO-IRFS59N10DTRRPBF-1190

      		 Nuovo e originale
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DPBF

      Mfr.#: IRFS59N10DPBF

      OMO.#: OMO-IRFS59N10DPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRLPBF

      Mfr.#: IRFS59N10DTRLPBF

      OMO.#: OMO-IRFS59N10DTRLPBF-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di IRFS59N10DPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,36 USD
      2,36 USD
      10
      2,24 USD
      22,44 USD
      100
      2,13 USD
      212,54 USD
      500
      2,01 USD
      1 003,70 USD
      1000
      1,89 USD
      1 889,30 USD
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