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BSB015N04NX3 G

BSB015N04NX3 G
Mfr. #:
BSB015N04NX3 G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSB015N04NX3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
WDSON-2-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
40 V
Id - Corrente di scarico continua:
35 A
Rds On - Resistenza Drain-Source:
1.5 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.8 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
6.35 mm
Serie:
OptiMOS 3
Tipo di transistor:
1 N-Channel
Larghezza:
5.05 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
7.6 ns
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
6.4 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
36 ns
Tempo di ritardo di accensione tipico:
23 ns
Parte # Alias:
BSB015N04NX3GXUMA1 BSB15N4NX3GXT SP000597852
Tags
BSB015N, BSB015, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSB015N04NX3GXUMA1
DISTI # V72:2272_06378249		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5291
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # 30729203		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 5:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 5-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB015N04NX3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.4900
  • 10000:$1.4900
  • 20000:$1.3900
  • 30000:$1.3900
  • 50000:$1.2900
BSB015N04NX3GXUMA1
DISTI # 34AC1373		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes8825
  • 1:$3.4700
  • 10:$3.0600
  • 25:$2.7600
  • 50:$2.4600
  • 100:$2.1500
  • 250:$1.8400
  • 500:$1.6800
  • 1000:$1.5900
BSB015N04NX3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		95
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
BSB015N04NX3 G
DISTI # 726-BS726-B015N04NX3		Infineon Technologies AGMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
RoHS: Compliant		0
  • 1:$2.8800
  • 10:$2.4500
  • 100:$2.1200
  • 250:$2.0100
  • 500:$1.8100
  • 1000:$1.5300
  • 2500:$1.4500
  • 5000:$1.3900
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:$3.2200
  • 10:$3.0100
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.3900
  • 1000:$2.2700
BSB015N04NX3GXUMA1
DISTI # C1S322000618394		Infineon Technologies AGMOSFETs
RoHS: Compliant		3034
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:£3.7900
  • 10:£3.0100
  • 100:£2.4600
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Mfr.#: 108-0904-001

OMO.#: OMO-108-0904-001-BEL

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Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di BSB015N04NX3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,87 USD
2,87 USD
10
2,44 USD
24,40 USD
100
2,11 USD
211,00 USD
250
2,01 USD
502,50 USD
500
1,80 USD
900,00 USD
1000
1,52 USD
1 520,00 USD
2500
1,44 USD
3 600,00 USD
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