SI6926ADQ-T1-GE3

Mfr. #:: SI6926ADQ-T1-GE3
Produttore:: Vishay
Descrizione:: IGBT Transistors MOSFET Dual N-Ch MOSFET 20V 30mohm @ 4.5V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI6926ADQ-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: VISHY

categoria di prodotto: FET - Array

Serie: SI6926ADQ

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI6926ADQ-GE3

Unità di peso: 0.005573 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-TSSOP (0.173", 4.40mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-TSSOP

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 830mW

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 4.1A

Rds-On-Max-Id-Vgs: 30 mOhm @ 4.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 10.5nC @ 4.5V

Pd-Power-Dissipazione: 830 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 16 ns

Ora di alzarsi: 16 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuo-Scarico-Corrente: 4.1 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistenza: 30 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 46 ns

Tempo di ritardo all'accensione tipico: 6 ns

Modalità canale: Aumento

Tags: SI6926ADQ-T1, SI6926ADQ-T, SI6926AD, SI6926A, SI6926, SI692, SI69, SI6

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6926ADQ-T1-GE3 Descrizione

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8

***et: Trans MOSFET Array N-CH 30V 4.1A 8-Pin TSSOP

***ronik: DUAL 20V 5A 30mOhm TSSOP-8 RoHSconf

***ark: Dual N Channel Mosfet, 20V, Tssop, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:1V Rohs Compliant: No

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI6926ADQ-T1-GE3 DISTI # V36:1790_09215419	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	3000	24000:$0.3415 9000:$0.3462 6000:$0.3468 3000:$0.3473
SI6926ADQ-T1-GE3 DISTI # V72:2272_09215419	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	2975	1000:$0.3802 500:$0.4480 250:$0.5508 100:$0.5525 25:$0.6726 10:$0.6756 1:$0.7805
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18198In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	18198In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.3509
SI6926ADQ-T1-GE3 DISTI # 30207782	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3473
SI6926ADQ-T1-GE3 DISTI # 30349734	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	2975	1000:$0.3802 500:$0.4480 250:$0.5508 100:$0.5525 25:$0.6726 19:$0.6756
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6926ADQ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.3399 6000:$0.3389 12000:$0.3379 18000:$0.3369 30000:$0.3359
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R (Alt: SI6926ADQ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6869 6000:€0.4689 12000:€0.4029 18000:€0.3719 30000:€0.3469
SI6926ADQ-T1-GE3 DISTI # SI6926ADQ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R (Alt: SI6926ADQ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.3196 6000:$0.2459 9000:$0.1957 15000:$0.1653 30000:$0.1522 75000:$0.1475 150000:$0.1431
SI6926ADQ-T1-GE3 DISTI # 69W7217	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:830mW, RoHS Compliant: Yes	2950	1:$1.2400 25:$1.0100 50:$0.8930 100:$0.7750 250:$0.7210 500:$0.6670 1000:$0.5270
SI6926ADQ-T1-GE3. DISTI # 30AC0181	Vishay Intertechnologies	DUAL N-CHANNEL 2.5-V (G-S) MOSFET , ROHS COMPLIANT: NO	3000	1:$0.4360 3000:$0.4310 6000:$0.4250 12000:$0.4200 18000:$0.4150 30000:$0.4100
SI6926ADQ-T1-GE3	Vishay Intertechnologies	Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8 RoHS: Compliant	6000Reel	3000:$0.5450
SI6926ADQ-T1-GE3 DISTI # 781-SI6926ADQ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8 RoHS: Compliant	24121	1:$1.0300 10:$0.8420 100:$0.6460 500:$0.5560 1000:$0.4390 3000:$0.4100 6000:$0.3890 9000:$0.3750
SI6926ADQT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI6926ADQ-T1-GE3 DISTI # 2335342	Vishay Intertechnologies	MOSFET, DUAL N CH, 20V, 4.1A, TSSOP RoHS: Compliant	5840	1:$1.5900 10:$1.3800 100:$1.0700 500:$0.9180
SI6926ADQ-T1-GE3 DISTI # C1S806001173390	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3474
SI6926ADQ-T1-GE3 DISTI # C1S803601939199	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2975	250:$0.5508 100:$0.5526 25:$0.6727 10:$0.6758
SI6926ADQ-T1-GE3 DISTI # 2335342	Vishay Intertechnologies	MOSFET, DUAL N CH, 20V, 4.1A, TSSOP RoHS: Compliant	5840	5:£0.7190 25:£0.6430 100:£0.5150 250:£0.5130 500:£0.5110
SI6926ADQ-T1-GE3 DISTI # XSFP00000077638	Vishay Siliconix	RoHS: Compliant	26247	3000:$1.0900 26247:$0.9909
SI6926ADQ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8 RoHS: Compliant	Americas - 54000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI6926ADQ-T1-GE3 OMO.#: OMO-SI6926ADQ-T1-GE3	MOSFET 20V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3	MOSFET 20V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6926ADQ-T1-GE3 OMO.#: OMO-SI6926ADQ-T1-GE3-VISHAY	IGBT Transistors MOSFET Dual N-Ch MOSFET 20V 30mohm @ 4.5V
	Mfr.#: SI6926ADQ-T1-E3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI6926ADQ-T1-GE3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI6926ADQ OMO.#: OMO-SI6926ADQ-1190	Nuovo e originale
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3-VISHAY	MOSFET 2N-CH 20V 4.1A 8TSSOP
	Mfr.#: SI6926ADQ-T1-E3-S OMO.#: OMO-SI6926ADQ-T1-E3-S-1190	Nuovo e originale
	Mfr.#: SI6926ADQ-TE2-E3-PBF OMO.#: OMO-SI6926ADQ-TE2-E3-PBF-1190	Nuovo e originale
	Mfr.#: SI6926ADQT1GE3 OMO.#: OMO-SI6926ADQT1GE3-1190	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SI6926ADQ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,46 USD~~; ~~0,46 USD~~

10: ~~0,44 USD~~; ~~4,39 USD~~

100: ~~0,42 USD~~; ~~41,58 USD~~

500: ~~0,39 USD~~; ~~196,35 USD~~

1000: ~~0,37 USD~~; ~~369,60 USD~~

Iniziare con

SI6926ADQ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes