SIE832DF-T1-GE3

SIE832DF-T1-GE3
Mfr. #:
SIE832DF-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIE832DF-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SIE832, SIE83, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 40V 50A 10-POLARPAK
Parte # Mfg. Descrizione Azione Prezzo
SIE832DF-T1-GE3
DISTI # SIE832DF-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
740In Stock
  • 500:$2.1441
  • 100:$2.6478
  • 10:$3.2290
  • 1:$3.6200
SIE832DF-T1-GE3
DISTI # SIE832DF-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$1.6678
SIE832DF-T1-GE3
DISTI # SIE832DF-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    SIE832DF-T1-GE3
    DISTI # 781-SIE832DF-GE3
    Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PolarPAK
    RoHS: Compliant
    0
      SIE832DFT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      Europe - 3000
        Immagine Parte # Descrizione
        SIE832DF-T1-E3

        Mfr.#: SIE832DF-T1-E3

        OMO.#: OMO-SIE832DF-T1-E3

        MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
        SIE832DF-T1-GE3

        Mfr.#: SIE832DF-T1-GE3

        OMO.#: OMO-SIE832DF-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
        SIE832DF-T1-E3

        Mfr.#: SIE832DF-T1-E3

        OMO.#: OMO-SIE832DF-T1-E3-VISHAY

        RF Bipolar Transistors MOSFET 40V 50A 104W
        SIE832DF-T1-GE3

        Mfr.#: SIE832DF-T1-GE3

        OMO.#: OMO-SIE832DF-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V
        SIE832DF

        Mfr.#: SIE832DF

        OMO.#: OMO-SIE832DF-1190

        Nuovo e originale
        SIE832DFT1GE3

        Mfr.#: SIE832DFT1GE3

        OMO.#: OMO-SIE832DFT1GE3-1190

        Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
        Inserisci la quantità:
        Il prezzo attuale di SIE832DF-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        2,50 USD
        2,50 USD
        10
        2,38 USD
        23,77 USD
        100
        2,25 USD
        225,16 USD
        500
        2,13 USD
        1 063,25 USD
        1000
        2,00 USD
        2 001,40 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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