IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD65R420CFD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPD65R420CFD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
8.7 A
Rds On - Resistenza Drain-Source:
420 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
32 nC
Pd - Dissipazione di potenza:
83.3 W
Configurazione:
Separare
Nome depositato:
CoolMOS
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Serie:
CoolMOS CFD2
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
7 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Parte # Alias:
IPD65R420CFDBTMA1 IPD65R42CFDXT SP000891704
Unità di peso:
0.139332 oz
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND
      Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704
      Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500
      Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant
      46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD
      Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant
      0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A
      Infineon Technologies AGMOSFET LOW POWER_LEGACY0
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        OMO.#: OMO-IPD65R250C6S-1190

        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        5500
        Inserisci la quantità:
        Il prezzo attuale di IPD65R420CFD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,73 USD
        1,73 USD
        10
        1,47 USD
        14,70 USD
        100
        1,17 USD
        117,00 USD
        500
        1,03 USD
        515,00 USD
        1000
        0,85 USD
        854,00 USD
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