IXYH40N65C3H1

IXYH40N65C3H1
Mfr. #:
IXYH40N65C3H1
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 650V/80A XPT Copacked TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYH40N65C3H1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXYH40N65C3H1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
IGBT - Singolo
Serie
GenX3, XPT
Confezione
Tubo
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Nome depositato
XPT
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247 (IXYH)
Configurazione
Separare
Potenza-Max
300W
Reverse-Tempo di ripristino-trr
120ns
Corrente-Collettore-Ic-Max
80A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
PT
Corrente-Collettore-Impulsato-Icm
180A
Vce-su-Max-Vge-Ic
2.2V @ 15V, 40A
Energia di commutazione
860μJ (on), 400μJ (off)
Gate-Charge
70nC
Td-on-off-25°C
26ns/106ns
Condizione di test
400V, 30A, 10 Ohm, 15V
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
650 V
Collettore-Emettitore-Saturazione-Tensione
1.85 V
Continuo-Collettore-Corrente-a-25-C
80 A
Gate-Emettitore-Corrente di dispersione
100 nA
Massima-tensione-gate-emettitore
30 V
Continuo-Collettore-Corrente-Ic-Max
80 A
Tags
IXYH40N65C, IXYH40N6, IXYH4, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 RoHS Compliant: Yes
***i-Key
IGBT 650V 80A 300W TO247
***nell
IGBT, SINGLE, 650V, 40A, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXYH40N65C3H1
DISTI # IXYH40N65C3H1-ND
IXYS CorporationIGBT 650V 80A 300W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$6.0917
IXYH40N65C3H1
DISTI # 747-IXYH40N65C3H1
IXYS CorporationIGBT Transistors 650V/80A XPT Copacked TO-247
RoHS: Compliant
328
  • 1:$7.4300
  • 10:$6.6900
  • 25:$6.0900
  • 50:$5.5700
  • 100:$5.5000
  • 250:$5.0100
  • 500:$4.6100
  • 1000:$4.0100
IXYH40N65C3H1
DISTI # 2470019
IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant
6
  • 1:$11.7600
  • 10:$10.5900
  • 25:$9.6400
  • 50:$8.8100
  • 100:$8.7100
  • 250:$7.9300
  • 500:$7.3000
  • 1000:$6.3500
IXYH40N65C3H1
DISTI # 2470019
IXYS CorporationIGBT, SINGLE, 650V, 40A, TO-247
RoHS: Compliant
9
  • 1:£7.6900
  • 5:£7.0300
  • 10:£5.7600
Immagine Parte # Descrizione
IXYH40N90C3D1

Mfr.#: IXYH40N90C3D1

OMO.#: OMO-IXYH40N90C3D1

IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
IXYH40N65C3H1

Mfr.#: IXYH40N65C3H1

OMO.#: OMO-IXYH40N65C3H1

IGBT Transistors 650V/80A XPT Copacked TO-247
IXYH40N90C3

Mfr.#: IXYH40N90C3

OMO.#: OMO-IXYH40N90C3

IGBT Transistors GenX3 900V XPT IGBTs
IXYH40N120B3

Mfr.#: IXYH40N120B3

OMO.#: OMO-IXYH40N120B3

IGBT Transistors DISC IGBT XPT-GENX3
IXYH40N65B3D1

Mfr.#: IXYH40N65B3D1

OMO.#: OMO-IXYH40N65B3D1

IGBT Transistors DISC IGBT XPT-GENX3
IXYH40N65B3D1

Mfr.#: IXYH40N65B3D1

OMO.#: OMO-IXYH40N65B3D1-IXYS-CORPORATION

IGBT
IXYH40N65C3D1

Mfr.#: IXYH40N65C3D1

OMO.#: OMO-IXYH40N65C3D1-IXYS-CORPORATION

IGBT 650V 80A 300W TO247
IXYH40N120C3

Mfr.#: IXYH40N120C3

OMO.#: OMO-IXYH40N120C3-IXYS-CORPORATION

IGBT Transistors GenX3 1200V XPT IGBT
IXYH40N65C3H1

Mfr.#: IXYH40N65C3H1

OMO.#: OMO-IXYH40N65C3H1-IXYS-CORPORATION

IGBT Transistors 650V/80A XPT Copacked TO-247
IXYH40N65C3

Mfr.#: IXYH40N65C3

OMO.#: OMO-IXYH40N65C3-IXYS-CORPORATION

IGBT Transistors 650V/80A XPT C3-Class TO-247
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IXYH40N65C3H1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,02 USD
6,02 USD
10
5,71 USD
57,14 USD
100
5,41 USD
541,35 USD
500
5,11 USD
2 556,40 USD
1000
4,81 USD
4 812,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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