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FZ800R33KF2C

FZ800R33KF2C
Mfr. #:
FZ800R33KF2C
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules 3300V 800A SINGLE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FZ800R33KF2C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
N
Prodotto:
Moduli di silicio IGBT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
3300 V
Tensione di saturazione collettore-emettitore:
3.4 V
Corrente continua del collettore a 25 C:
1300 A
Corrente di dispersione gate-emettitore:
400 nA
Pd - Dissipazione di potenza:
9.6 kW
Pacchetto/custodia:
IHM
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 125 C
Confezione:
Vassoio
Altezza:
38 mm
Lunghezza:
140 mm
Larghezza:
130 mm
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
2
sottocategoria:
IGBT
Parte # Alias:
FZ800R33KF2CNOSA1 SP000100609
Tags
FZ800R33KF2C, FZ800R33KF2, FZ800R33KF, FZ800R3, FZ800R, FZ800, FZ80, FZ8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Module N-CH 3.3KV 1300A 7-pin IHV130-3
***ineon SCT
IHV A 3300 V, 800 A 130 mm single-switch IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications, A-IHV130-3
***ineon
3300V IHV 130mm single switch IGBT Module with IGBT2 - The best solution for your traction and industry applications | Summary of Features: High reliability and robust module construction | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
***ical
Trans IGBT Module N-CH 1700V 404A 1450000mW 7-Pin 62MM-1 Tray
***ark
Igbt, Module, N-Ch, 1.7Kv, 404A; Transistor Polarity:N Channel; Dc Collector Current:404A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:1.45Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Rohs Compliant: Yes |Infineon FF300R17KE3HOSA1
***ineon
Our well-known 62 mm 1700V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar; traction
***p One Stop
Trans IGBT Module N-CH 1200V 700A 3900000mW 5-Pin 62MM-2 Tray
***nell
TRANSISTOR, IGBT MODULE, 1.2KV, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 3.9kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
***ark
Transistor, Igbt Module, 1.2Kv, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:3.9Kw; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FZ600R12KS4HOSA1
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A
***et
Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray
***el Electronic
INFINEON BSM50GD120DN2 IGBT Array & Module Transistor, N Channel, 72 A, 3 V, 350 W, 1.2 kV, EconoPACK
***nsix Microsemi
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel
***ment14 APAC
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
Parte # Mfg. Descrizione Azione Prezzo
FZ800R33KF2CNOSA1
DISTI # FZ800R33KF2CNOSA1-ND		Infineon Technologies AGMODULE IGBT A-IHV130-3
RoHS: Not compliant
Min Qty: 2
Container: Tray		Temporarily Out of Stock
  • 2:$1,421.1300
FZ800R33KF2CNOSA1
DISTI # FZ800R33KF2CNOSA1		Infineon Technologies AGTRACTION - Trays (Alt: FZ800R33KF2CNOSA1)
RoHS: Not Compliant
Min Qty: 2
Container: Tray		Americas - 0
  • 2:$1,462.0000
  • 4:$1,409.0000
  • 8:$1,358.0000
  • 12:$1,313.0000
  • 20:$1,289.0000
1SP0635S2M1-FZ800R33KF2C
DISTI # 1SP0635SF8R332C		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
RoHS: Compliant		0
    1SP0635D2S1-FZ800R33KF2C
    DISTI # 1SP0635DF833F2C    		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
    RoHS: Compliant    		0
      1SP0635V2M1-FZ800R33KF2C
      DISTI # 1SP0635VF8R332C      		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
      RoHS: Compliant      		0
        Immagine Parte # Descrizione
        FZ800R33KF2C

        Mfr.#: FZ800R33KF2C

        OMO.#: OMO-FZ800R33KF2C-125

        		 IGBT Modules 3300V 800A SINGLE
        FZ800R12KS4_B2

        Mfr.#: FZ800R12KS4_B2

        OMO.#: OMO-FZ800R12KS4-B2-125

        		 IGBT Modules N-CH 1.2KV 1.2KA
        FZ800R12KF4S1

        Mfr.#: FZ800R12KF4S1

        OMO.#: OMO-FZ800R12KF4S1-1190

        		 Nuovo e originale
        FZ800R12KS4

        Mfr.#: FZ800R12KS4

        OMO.#: OMO-FZ800R12KS4-1190

        		 Nuovo e originale
        FZ800R17KE4

        Mfr.#: FZ800R17KE4

        OMO.#: OMO-FZ800R17KE4-1190

        		 Nuovo e originale
        FZ800R17KF

        Mfr.#: FZ800R17KF

        OMO.#: OMO-FZ800R17KF-1190

        		 Nuovo e originale
        FZ800R17KF4

        Mfr.#: FZ800R17KF4

        OMO.#: OMO-FZ800R17KF4-1190

        		 Nuovo e originale
        FZ800R17KF6C-B2

        Mfr.#: FZ800R17KF6C-B2

        OMO.#: OMO-FZ800R17KF6C-B2-1190

        		 IGBT Modules 1700V 800A SINGLE
        FZ800R33KF2

        Mfr.#: FZ800R33KF2

        OMO.#: OMO-FZ800R33KF2-1190

        		 Nuovo e originale
        FZ800R45KL3B5NOSA2

        Mfr.#: FZ800R45KL3B5NOSA2

        OMO.#: OMO-FZ800R45KL3B5NOSA2-INFINEON-TECHNOLOGIES

        		 MODULE IGBT A-IHV130-4
        Disponibilità
        Azione:
        Available
        Su ordine:
        5000
        Inserisci la quantità:
        Il prezzo attuale di FZ800R33KF2C è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1 268,87 USD
        1 268,87 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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