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A3T18H400W23SR6

A3T18H400W23SR6
Mfr. #:
A3T18H400W23SR6
Produttore:
NXP Semiconductors
Descrizione:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A3T18H400W23SR6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
A3T18H400W23SR6 maggiori informazioni A3T18H400W23SR6 Product Details
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Doppio canale N
Tecnologia:
si
Id - Corrente di scarico continua:
3.2 A
Vds - Tensione di rottura Drain-Source:
- 500 mV, 65 V
Guadagno:
16.8 dB
Potenza di uscita:
71 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
ACP-1230S-4L2S
Confezione:
Bobina
Frequenza operativa:
1805 MHz to 1880 MHz
Tipo:
MOSFET di potenza RF
Marca:
Semiconduttori NXP
Numero di canali:
2 Channel
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
150
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 6 V, 10 V
Vgs th - Tensione di soglia gate-source:
1.3 V
Parte # Alias:
935360345128
Tags
A3T18, A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1880 MHZ, 71 W AVG., 28 V, REEL 13" Q2 NDP, TR
***et
RF Power LDMOS Transistor 1805MHz to 1880MHz 71W 28V 6-Pin CFM6F T/R
***W
RF Power Transistor, 1.805 to 1.88 GHz, Typ. Gain in dB is 16.8 @ 1880 MHz, 28 V, SOT1800-4, LDMOS
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Parte # Mfg. Descrizione Azione Prezzo
A3T18H400W23SR6
DISTI # A3T18H400W23SR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$120.5911
A3T18H400W23SR6
DISTI # A3T18H400W23SR6		Avnet, Inc.RF Power LDMOS Transistor 1805MHz to 1880MHz 71W 28V 6-Pin CFM6F T/R - Tape and Reel (Alt: A3T18H400W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$115.2900
  • 900:$117.5900
  • 600:$121.9900
  • 300:$126.8900
  • 150:$132.0900
A3T18H400W23SR6
DISTI # 47AC8093		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 1805-1880 MHZ, 71 W AVG., 28 V REEL0
  • 100:$113.3400
  • 50:$120.6000
  • 25:$122.4100
  • 10:$124.2200
  • 5:$127.8500
  • 1:$131.4800
A3T18H400W23SR6
DISTI # 771-A3T18H400W23SR6		NXP SemiconductorsRF MOSFET Transistors A3T18H400W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 1:$138.7300
  • 5:$136.0000
  • 10:$129.6600
  • 25:$126.9400
  • 100:$120.5900
  • 150:$112.1800
A3T18H400W23SR6
DISTI # A3T18H400W23SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 150:$136.0100
Immagine Parte # Descrizione
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di A3T18H400W23SR6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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