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2N5191G

2N5191G
Mfr. #:
2N5191G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT 4A 60V 40W NPN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
2N5191G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5191G Datasheet2N5191G Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-225-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
60 V
Collettore-tensione di base VCBO:
60 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
1.4 V
Corrente massima del collettore CC:
4 A
Guadagno larghezza di banda prodotto fT:
2 MHz
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Serie:
2N5191
Altezza:
11.04 mm
Lunghezza:
7.74 mm
Confezione:
Massa
Larghezza:
2.66 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
4 A
Guadagno base/collettore DC hfe min:
25
Pd - Dissipazione di potenza:
40 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
500
sottocategoria:
transistor
Unità di peso:
0.028784 oz
Tags
2N5191, 2N519, 2N51, 2N5
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
4.0 A, 60 V NPN Bipolar Power Transistor
***ure Electronics
2N Series 60 V 4 A Through Hole Silicon NPN Power Transistor - TO-225
***ical
Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
***SIT Distribution GmbH
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***ark
Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2MHz; DC Current Gain hFE Min:2hFE; MSL:- RoHS Compliant: Yes
***emi
4.0 A, 60 V NPN Darlington Bipolar Power Transistor
*** Stop Electro
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin
***ical
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
***ure Electronics
MJE Series 60 V 4 A Darlington Complementary Silicon Power Transistor - TO-225
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor
***ical
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***ure Electronics
Bipolar Transistors - BJT 4A 60V 36W NPN
***nell
TRANSISTOR, NPN, 60V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-225; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
This series of plastic medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442.
***emi
Medium Power NPN Darlington Bipolar Power Transistor
***ure Electronics
BD Series 60 V 4 A Medium Power Silicon NPN Darlington Transistor - TO-225
***r Electronics
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***ical
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
***ark
BIPOLAR TRANSISTOR, NPN, 60V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***nell
DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Device Marking: BD677A; Full Power Rating Temperature: 25°C; Hfe Min: 750; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 40W; Transistor Type: Darlington; Voltage Vcbo: 60V
Parte # Mfg. Descrizione Azione Prezzo
2N5191G
DISTI # V99:2348_07322476		ON SemiconductorTrans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box
RoHS: Compliant		2501
  • 50000:$0.2167
  • 25000:$0.2180
  • 10000:$0.2256
  • 2500:$0.2332
  • 1000:$0.2661
  • 100:$0.3224
  • 10:$0.4535
  • 1:$0.5242
2N5191G
DISTI # 2N5191GOS-ND		ON SemiconductorTRANS NPN 60V 4A TO225AA
RoHS: Compliant
Min Qty: 1
Container: Bulk		2003In Stock
  • 1000:$0.3193
  • 500:$0.3938
  • 100:$0.4926
  • 10:$0.6360
  • 1:$0.7200
2N5191G
DISTI # 25633069		ON SemiconductorTrans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box
RoHS: Compliant		14000
  • 2000:$0.2800
2N5191G
DISTI # 30196185		ON SemiconductorTrans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box
RoHS: Compliant		2501
  • 2500:$0.2332
  • 1000:$0.2661
  • 100:$0.3224
  • 26:$0.4535
2N5191G
DISTI # 27031931		ON SemiconductorTrans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box
RoHS: Compliant		1000
  • 500:$0.2368
2N5191G
DISTI # 2N5191G		ON SemiconductorTrans GP BJT NPN 60V 4A 3-Pin TO-225AA Box - Bulk (Alt: 2N5191G)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 856
  • 1:$0.6029
  • 10:$0.4969
  • 25:$0.4959
  • 50:$0.4949
  • 100:$0.3199
  • 500:$0.3189
  • 1000:$0.2549
2N5191G
DISTI # 863-2N5191G		ON SemiconductorBipolar Transistors - BJT 4A 60V 40W NPN
RoHS: Compliant		7506
  • 1:$0.6700
  • 10:$0.5500
  • 100:$0.3550
  • 1000:$0.2840
  • 2500:$0.2400
  • 10000:$0.2310
  • 25000:$0.2220
2N5191
DISTI # 511-2N5191		STMicroelectronicsBipolar Transistors - BJT NPN Power Switching
RoHS: Compliant		0
    2N5191
    DISTI # 863-2N5191    		ON SemiconductorBipolar Transistors - BJT 4A 60V 40W NPN
    RoHS: Not compliant    		0
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      Disponibilità
      Azione:
      Available
      Su ordine:
      1985
      Inserisci la quantità:
      Il prezzo attuale di 2N5191G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,67 USD
      0,67 USD
      10
      0,55 USD
      5,50 USD
      100
      0,36 USD
      35,50 USD
      1000
      0,28 USD
      284,00 USD
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