BSC009NE2LSXT

Mfr. #:: BSC009NE2LSXT
Produttore:: Infineon Technologies
Descrizione:: IGBT Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC009NE2LSXT Scheda dati
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Maggiori informazioni:: BSC009NE2LSXT maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: OptiMOS

Confezione: Bobina

Alias parziali: BSC009NE2LSATMA1 SP000893362

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: TDSON-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Singola Quad Scarico Tripla Sorgente

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 96 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 19 ns

Ora di alzarsi: 33 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 100 A

Vds-Drain-Source-Breakdown-Voltage: 25 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1 V to 2.2 V

Rds-On-Drain-Source-Resistenza: 900 uOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 48 ns

Tempo di ritardo all'accensione tipico: 10 ns

Qg-Gate-Carica: 126 nC

Transconduttanza diretta-Min: 170 S

Tags: BSC009, BSC00, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC009NE2LSXT Maggiori informazioni

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC009NE2LSATMA1 DISTI # V72:2272_06383247	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	6617	6000:$0.7025 3000:$0.7806 1000:$0.8673 500:$0.9935 250:$1.0734 100:$1.1926 25:$1.4583 10:$1.4867 1:$1.9142
BSC009NE2LSATMA1 DISTI # V36:1790_06383247	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20228In Stock	1000:$0.9857 500:$1.1897 100:$1.4480 10:$1.8010 1:$2.0100
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20228In Stock	1000:$0.9857 500:$1.1897 100:$1.4480 10:$1.8010 1:$2.0100
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	20000In Stock	10000:$0.8400 5000:$0.8580
BSC009NE2LSATMA1 DISTI # 31970309	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	6617	6000:$0.7552 3000:$0.8391 1000:$0.9323 500:$1.0680 250:$1.1539 100:$1.2820 25:$1.5677 10:$1.5982
BSC009NE2LSATMA1 DISTI # 33111756	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.9623
BSC009NE2LSATMA1 DISTI # SP000893362	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP (Alt: SP000893362) RoHS: Compliant Min Qty: 5000	Europe - 10000	50000:€0.5529 30000:€0.5959 20000:€0.6459 10000:€0.7039 5000:€0.8609
BSC009NE2LSATMA1 DISTI # BSC009NE2LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Tape and Reel (Alt: BSC009NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.6089 30000:$0.6199 20000:$0.6419 10000:$0.6659 5000:$0.6909
BSC009NE2LSATMA1 DISTI # 50Y1791	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP - Product that comes on tape, but is not reeled (Alt: 50Y1791) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
BSC009NE2LSATMA1 DISTI # 50Y1791	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	5000	1000:$0.8790 500:$1.0600 250:$1.1400 100:$1.2100 50:$1.3100 25:$1.4100 10:$1.5200 1:$1.7800
BSC009NE2LSATMA1. DISTI # 29AC2868	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:2.5W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.6150 30000:$0.6270 20000:$0.6490 10000:$0.6730 1:$0.6980
BSC009NE2LS DISTI # 726-BSC009NE2LS	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	10236	1:$1.7600 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8700
BSC009NE2LSATMA1 DISTI # 726-BSC009NE2LSATMA	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	9488	1:$1.7600 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8700
BSC009NE2LSXT DISTI # 726-BSC009NE2LSATMA1	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	0	5000:$0.7810 10000:$0.7500
BSC009NE2LSATMA1 DISTI # 9064441P	Infineon Technologies AG	MOSFET N-CHANNEL 25V 41A OPTIMOS TSDSON8, RL	3240	2500:£0.5810 1000:£0.6230 500:£0.7580 100:£0.8600
BSC009NE2LSATMA1 DISTI # 2480703RL	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	0	5000:$1.3200 1000:$1.3400 500:$1.6200 100:$1.8500 10:$2.3100 1:$2.7100
BSC009NE2LSATMA1 DISTI # 2480703	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	23296	5000:$1.3200 1000:$1.3400 500:$1.6200 100:$1.8500 10:$2.3100 1:$2.7100
BSC009NE2LSATMA1 DISTI # 2480703	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8	17992	500:£0.8170 250:£0.8770 100:£0.9350 25:£1.1600 5:£1.2700
BSC009NE2LSATMA1 DISTI # XSKDRABS0030899	Infineon Technologies AG	SmallSignalBipolarTransistor,1AI(C),45VV(BR)CEO,1-Element,NPN,Silicon RoHS: Compliant	15000 in Stock0 on Order	15000:$0.8771 5000:$0.9397

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS-1190	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5 OMO.#: OMO-BSC009NE2LS5-1190	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: BSC009NE2LS5)
	Mfr.#: BSC009NE2LS5I OMO.#: OMO-BSC009NE2LS5I-1190	Nuovo e originale
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 41A TDSON-8
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT-126	IGBT Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di BSC009NE2LSXT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,12 USD~~; ~~1,12 USD~~

10: ~~1,07 USD~~; ~~10,69 USD~~

100: ~~1,01 USD~~; ~~101,25 USD~~

500: ~~0,96 USD~~; ~~478,15 USD~~

1000: ~~0,90 USD~~; ~~900,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

BSC009 7
BSC00 8
BSC0 601
BSC 999

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BSC009NE2LSXT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes